The quantum dot up-conversion device combines an infrared photodetector (PD) and a visible quantum-dot light-emitting diode (QLED) to directly convert infrared target to visible image. However, large efficiency loss is...

PbS quantum dot light-emitting diodes (QLEDs) emitting around 1550 nm promise important applications in optical communications. However, due to insufficient suppression of surface traps for large-size PbS quantum dots (QDs), their performance under large driving current density was not satisfactory. In this work, octanethiol surfactant was added into a PbS QD solution and adsorbed onto the dot surface. As a result, the surface traps and the continuous oxidation of the unprotected (100) facets in PbS QDs were greatly suppressed. Therefore, the PbS QDs with octanethiol doubled their photoluminescence efficiency and showed outstanding stability. The PbS-based QLEDs with benchmark device structure showed a breakthrough high radiance of 18.3 W sr–1 m–2 with >2000 mA/cm2 driving current density. The efficient passivation of surface traps with octanethiol surfactant and the suppressed coupling between excitons and surface states under large working current were the main reasons for achieving the breakthrough high radiance.