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We demonstrate enhanced four-wave mixing (FWM) in doped silica waveguides integrated with graphene oxide (GO) layers. Owing to strong mode overlap between the integrated waveguides and GO films that have a high Kerr nonlinearity and low loss, the FWM efficiency of the hybrid integrated waveguides is significantly improved. We perform FWM measurements for different pump powers, wavelength detuning, GO coating lengths, and number of GO layers. Our experimental results show good agreement with theory, achieving up to ∼9.5-dB enhancement in the FWM conversion efficiency for a 1.5-cm-long waveguide integrated with 2 layers of GO. We show theoretically that for different waveguide geometries an enhancement in FWM efficiency of ∼20 dB can be obtained in the doped silica waveguides and more than 30 dB in silicon nanowires and slot waveguides. This demonstrates the effectiveness of introducing GO films into integrated photonic devices in order to enhance the performance of nonlinear optical processes.

Integrated waveguide polarizers and polarization‐selective micro‐ring resonators (MRRs) incorporated with graphene oxide (GO) films are experimentally demonstrated. CMOS‐compatible doped silica waveguides and MRRs with both uniformly coated and patterned GO films are fabricated based on a large‐area, transfer‐free, layer‐by‐layer GO coating method that yields precise control of the film thickness. Photolithography and lift‐off processes are used to achieve photolithographic patterning of GO films with precise control of the placement and coating length. Detailed measurements are performed to characterize the performance of the devices versus GO film thickness and coating length as a function of polarization, wavelength and power. A high polarization dependent loss of ≈53.8 dB is achieved for the waveguide coated with 2‐mm‐long patterned GO films. It is found that intrinsic film material loss anisotropy dominates the performance for less than 20 layers whereas polarization‐dependent mode overlap dominates for thicker layers. For the MRRs, the GO coating length is reduced to 50 µm, yielding a ≈8.3 dB polarization extinction ratio between transverse electric (TE) and transverse magnetic (TM) resonances. These results offer interesting physical insights and trends of the layered GO films and demonstrate the effectiveness of introducing GO films into photonic‐integrated devices to realize high‐performance polarization selective components.

Micro-combs-optical frequency combs generated by integrated micro-cavity resonatorsoffer the full potential of their bulk counterparts, but in an integrated footprint. They have enabled breakthroughs in many fields including spectroscopy, microwave photonics, frequency synthesis, optical ranging, quantum sources, metrology and ultrahigh capacity data transmission. Here, by using a powerful class of micro-comb called soliton crystals, we achieve ultra-high data transmission over 75 km of standard optical fibre using a single integrated chip source. We demonstrate a line rate of 44.2 Terabits s −1 using the telecommunications C-band at 1550 nm with a spectral efficiency of 10.4 bits s −1 Hz −1. Soliton crystals exhibit robust and stable generation and operation as well as a high intrinsic efficiency that, together with an extremely low soliton micro-comb spacing of 48.9 GHz enable the use of a very high coherent data modulation format (64 QAM-quadrature amplitude modulated). This work demonstrates the capability of optical micro-combs to perform in demanding and practical optical communications networks.

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