This paper investigates the electrical performance of graphene-based on-chip spiral inductors by virtue of a physics-based equivalent circuit model. The skin and proximity effects, as well as the substrate loss effect, are considered and treated appropriately. The graphene resistance and inductance are combined into the circuit model. It is demonstrated that the electrical characteristics of the on-chip square spiral inductor can be improved by replacing copper with graphene. Moreover, graphene exhibits more effectiveness in improving the inductance in tapered inductors than uniform ones.

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This letter reports on the first demonstration of wafer scale flexible InP double heterogeneous bipolar transistors (DHBTs) with record cut-off frequency (f T) and maximum oscillation frequency (f MAX). The as-fabricated DHBTs on 3-inch InP bulk substrate are separated by epitaxial layer lift-off, followed by adhesive bonding onto flexible substrate. Radio frequency measurements reveal that the InP DHBTs on flexible substrate exhibit a f T of 337 GHz and f MAX of 485 GHz, representing the highest f T and f MAX ever reported in flexible electronics. Moreover, InP DHBTs on flexible substrate have good consistency and the functional transistor yield is more than 73%. The results provide ways to accelerate the time for flexible electronics toward future applications working at multi-gigahertz range.

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This letter presents the fabrication of InP double heterojunction bipolar transistors (DHBTs) on a 3-inch flexible substrate with various thickness values of the benzocyclobutene (BCB) adhesive bonding layer, the corresponding thermal resistance of the InP DHBT on flexible substrate is also measured and calculated. InP DHBT on a flexible substrate with 100 nm BCB obtains cut-off frequency f T = 358 GHz and maximum oscillation frequency f MAX = 530 GHz. Moreover, the frequency performance of the InP DHBT on flexible substrates at different bending radii are compared. It is shown that the bending strain has little effect on the frequency characteristics (less than 8.5%), and these bending tests prove that InP DHBT has feasible flexibility.