Radiation
detection, using materials to convert high-energy photons
to low-energy photons (X-ray imaging) or electrical charges (X-ray
detector), has become essential for a wide range of applications including
medical diagnostic technologies, computed tomography, quality inspection
and security, etc. Metal halide perovskite-based high-resolution scintillation-imaging
screens or direct conversion detectors are promising candidates for
such applications, because they have high absorption cross sections
for X-rays due to their heavy atom (e.g., Pb2+, Bi3+, I–) compositions; moreover, these materials
are solution-processable at low temperature, possessing tunable bandgaps,
near-unity photoluminescence quantum yields, low trap density, high
charge carrier mobility, and fast photoresponse. In this review, we
explore and decipher the working mechanism of scintillators and direct
conversion detectors as well as the key advantages of halide perovskites
for both detection approaches. We further discuss the recent advancements
in this promising research area, pointing out the remaining challenges
and our perspective for future research directions toward perovskite-based
X-ray applications.
Doping
of lead halide perovskites (LHPs) with the targeted impurities
has emerged as an additional lever, a dimension beyond structural
perfection and compositional distinction, for the alteration of many
properties of halide perovskites. The past several years has seen
an explosive increase in our knowledge of doped halide perovskites,
which exhibit distinct optical and electronic properties with respect
to undoped counterparts and improve performance of perovskite optoelectronic
devices. However, there are still a series of fundamental scientific
issues unresolved in the domain of doped perovskites. In this review,
we present a critical overview of recent advances in the synthesis,
property, and functional applications of metal-doped halide perovskites.
We lay a particular focus on three-dimensional LHPs and discuss the
influence of doped metal ions on the properties of these perovskites,
including main group metal cations, transition metal cations, and
rare earth (RE) metal cations. We thoroughly summarize the synthesis
methods used, doping-induced variation in optoelectronic properties,
and benefit of doping engineering for optimization of device performance.
We highlight the milestone achievements in this field and emphasize
new properties arising from dopants in halide perovskites. We also
address controversies encountered during the development of doped
perovskites and examine the remaining challenges in this exciting
field of science. Finally, we present our perspectives for further
investigation of this star material by doping engineering.
With the intense interest in inorganic cesium lead halide perovskites and their nanostructures for optoelectronic applications, high-quality crystalline nanomaterials with controllable morphologies and growth directions are desirable. Here, we report a vapor-phase epitaxial growth of horizontal single-crystal CsPbX (X = Cl, Br, I) nanowires (NWs) and microwires (MWs) with controlled crystallographic orientations on the (001) plane of phlogopite and muscovite mica. Moreover, single NWs, Y-shaped branches, interconnected NW or MW networks with 6-fold symmetry, and, eventually, highly dense epitaxial network of CsPbBr with nearly continuous coverage were controllably obtained by varying the growth time. Detailed structural study revealed that the CsPbBr wires grow along the [001] directions and have the (100) facets exposed. The incommensurate heteroepitaxial lattice match between the CsPbBr and mica crystal structures and the growth mechanism of these horizontal wires due to asymmetric lattice mismatch were proposed. Furthermore, the photoluminescence waveguiding and good performance from the photodetector device fabricated with these CsPbBr networks demonstrated that these well-connected CsPbBr NWs could serve as straightforward platforms for fundamental studies and optoelectronic applications.
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