Multibit memory devices based on the ferroelectric copolymer P(VDF‐TrFE) (poly‐(vinylidenefluoride‐trifluoroethylene)) are presented. Multilevel microstructures are fabricated by thermal imprinting of spin‐coated ferroelectric polymer film using a rigid Si template. Multibit storage in capacitors and thin‐film transistor memory is realized by implementing imprinted ferroelectric polymer films as the insulator and gate dielectric layers, respectively.

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One-dimensional (1D) photonic crystals (PC) containing two-layer CdS defects are proposed and fabricated by using electron beam evaporation. Ultrafast nonlinear optical responses were characterized with the ultrafast pump-probe method in both time and spectral domains. Two-photon absorption coefficient enhancement and pump-beam-induced defect mode shift were reported. Both effects are attributed to the light localization in the defect layer of the multilayer structures. Our results demonstrated that defective photonic crystals are good candidates for fabrication of ultrafast all-optical switching devices.

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We developed a novel transparent conductive film, molybdenum-doped indium oxide (IMO). Using normal thermal reactive evaporation without any special treatments, IMO films have been prepared on normal glass microscope slides at about 350 °C with electrical resistivity of 1.7×10−4 Ω cm, mobility over 100 cm2 V−1 s−1, and an average spectral transmittance in the visible region over 80%. From x-ray photoelectron spectroscopy and x-ray diffraction spectra of the IMO films, it is confirmed that the lattice of IMO is the same as that of In2O3 of cubic bixbyite structure, Mo6+ substitutes for In3+ in In2O3, and there are no new compounds in IMO. The valence difference of 3 between Mo6+ and In3+ is of great advantage to the IMO film with high conductivity and high transparency simultaneously.