The beneficial effects that silicon (Si) has on plant growth as well as resistance to biotic and abiotic stresses have been well documented for many crops in recent years. However, few studies focus on the effects of Si on plant growth during the propagation stage of strawberry (Fragaria × ananassa, Duchesne). This study was conducted to investigate the optimal method for Si application during the cutting propagation of strawberry in soilless cultivation. Strawberry mother plants were supplied with Si through foliar spray, runner spray, or root drench before the cutting propagation, then half of the daughter plants in each treatment received continued Si supply through foliar spray or through root drench after the cutting propagation. The results showed that the plant height, petiole length and diameter, leaf length and width, shoot fresh and dry weights, and root fresh and dry weights were significantly increased by Si root drench both before and after the cutting propagation. Moreover, plants absorbed more Si by drench than by spray, and the absorbed Si was only able to be transported from the root to the shoot, and from the mother plant to the daughter plant. Further research found that the chlorophyll fluorescence parameter of the maximum quantum efficiency of the photosystem II (Fv/Fm) and the activities of superoxide dismutase, ascorbate peroxidase, and guaiacol peroxidase were also enhanced while catalase did not change under a high temperature stress in strawberry treated with Si before and after cutting propagation by root drench. Thus, Si application by drenching the roots during the whole propagation period is recommended to increase the quality of the strawberry daughter plants in soilless cultivation.
Sorbus commixta is a valuable hardwood plant with a high economical value for its medicinal and ornamental qualities. The aim of this work was to investigate the effects of the iron (Fe) source and medium pH on the growth and development of S. commixta in vitro. The Fe sources used, including non-chelated iron sulfate (FeSO4), iron ethylenediaminetetraacetic acid (Fe-EDTA), and iron diethylenetriaminepentaacetic acid (Fe-DTPA), were supplemented to the Multipurpose medium with a final Fe concentration of 2.78 mg·L−1. The medium without any supplementary Fe was used as the control. The pH of the agar-solidified medium was adjusted to either 4.70, 5.70, or 6.70. The experiment was conducted in a culture room for six weeks with 25 °C day and night temperatures, and a 16-h photoperiod with a light intensity of 50 mmol·m−2·s−1 photosynthetic photon flux density (PPFD). Both the Fe source and pH affected the growth and development of the micropropagated plants in vitro. The leaves were greener in the pH 4.70 and 5.70 treatments. The tissue Fe content decreased with the increase of the medium pH. The leaf chlorophyll content was similar between plants treated with FeSO4 and those with Fe-EDTA. The numbers of the shoots and roots of plantlets treated with FeSO4 were 2.5 and 2 times greater than those of the control, respectively. The fresh and dry weights of the shoot and the root were the greatest for plants treated with Fe-EDTA combined with pH 5.70. The calcium, magnesium, and manganese contents in the plantlets increased in the pH 5.70 treatments regardless of the Fe source. Supplementary Fe decreased the activity of ferric chelate reductase. Overall, although the plantlets absorbed more Fe at pH 4.70, Fe-EDTA combined with pH 5.70 was found to be the best for the growth and development of S. commixta in vitro.
Carnation (Dianthus caryophyllus L.) is a major floricultural crop, cultivated widely for cut flowers. This study was conducted to determine the optimal supplementary light source for the cutting propagation of carnation ‘Dreambyul’ cuttings. Terminal cuttings were propagated in a glasshouse with an average of 260 µmol·m−2·s−1 photosynthetic photon flux density (PPFD) coming from the sun (the control), supplemented with one of three artificial light sources: mixed (red: blue: white = 6:1:1) light-emitting diodes (LED-mix), metal halide (MH) lamps, or high-pressure sodium (HPS) lamps. The supplementary light was provided from 7:00 to 17:00 h at 100 µmol·m−2·s−1 PPFD during propagation. The cuttings were kept on a fogged bench in a glasshouse for 25 days with 24/15 °C day/night temperatures and 88% relative humidity. Compared with the control, better root formation was observed from cuttings grown under the supplementary lights after 10 days. After 25 days of propagation, MH significantly increased the root length, root number, root fresh and dry weights, and shoot biomass, shoot length, and shoot fresh and dry weights. The best root ball formation and the highest root activities were also found in cuttings propagated with supplementary MH light. Supplementary light increased the plant temperature, quantum yield, stomatal conductance, and the contents of chlorophyll, soluble proteins, and carbohydrates. Overall, the root formation and development of carnation ‘Dreambyul’ cuttings were significantly promoted by the three supplementary light sources. Of the three, MH was identified as the optimal supplementary light source.
Silicon (Si) has been reported to benefit plant growth and stress resistance. This work aimed to find out an optimal method of Si application to enhance the resistance of strawberry (Fragaria × ananassa Duch.) transplants to high temperatures, commonly experienced in the summer when strawberries are propagated for greenhouse production in Korea. Plants of strawberry “Sulhyang”, “Maehyang”, and “Kuemsil” were subjected to one of five treatments before the cutting propagation: no treatment (control), substrate dressing of a water-soluble silicate fertilizer, substrate drench of 75 mg·L−1 Si (from potassium silicate) to the mother plants, or foliar spray of 75 mg·L−1 Si to either the mother plants or daughter plants. Half of the daughter plants in each Si treatment received continued application of Si through either substrate dressing of a water-soluble silicate fertilizer, substrate drench, or foliar spray after the cutting propagation. A high temperature (43°C) resistance test was conducted in plant growth chambers for 7 days with a 16-h photoperiod with a light intensity of 300 mmol·m−2·s−1 PPFD. During the high temperature test, the rate of decline in the photosynthesis was lower in plants treated with Si than in the control. After the high temperature test, it was observed that Si application significantly increased the shoot fresh weight of transplants. Moreover, the contents of sugars, proteins, and enzymatic (CAT, SOD, POD, and APX) and non-enzymatic (anthocyanin and proline) antioxidants were higher in plants treated with Si throughout the entire propagation period, compared to the control and plants only treated with Si before or after the cutting propagation. Overall, the Si application improved the growth of the transplants regardless of the application method used. Moreover, spraying the daughter plants with Si, and continually spraying the transplants were found to be the best and is recommended to increase the resistance of strawberries to high temperatures during propagation.
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