By the substitution of Al 2 O 3 and B 2 O 3 for SiO 2 of the glass network former, the structural and thermal, visco-elastic and physical properties of aluminosilicate glass were investigated. 27 Al NMR results showed that in the glass structure of the system, Al 3+ basically existed in the form of 4-coordinated [AlO 4 ] tetrahedron as the network former. Judged by Raman spectra, the bridging vibration Si-O b increased with the Al 2 O 3 /SiO 2 substitute. And the total non-bridging vibration Si-O nb decreased, indicating the enhancement of the structure compactness. While for B 2 O 3 /SiO 2 substitute, the vibration at around 1010 cm −1 and the bridging vibration Si-O b in Q 4 unit both decreased and the structure got loosened. Based on the study of the structure of glass, the thermal, viscoelastic, and physical properties such as viscosity, coefficient of the linear thermal expansion, high-temperature resistance, strain point, annealing point, and softening point, aswell as density and elastic modulus were investigated. The evaluation of the melting and fining process was also investigated by high-temperature observation test. Furthermore, the chemical strengthening properties of glass samples were also investigated. The introduction of B 2 O 3 benefited for the ion-exchange. In this study, the glass composition of sample 4 was suitable for the floating process under comprehensive consideration.

By the slight adjustment of oxides constituting thin film transistor-liquid crystal display (TFT-LCD) substrate glass, including equal mole fraction substitution of Al 2 O 3 , GeO 2 , B 2 O 3 , P 2 O 5 and ZrO 2 for SiO 2 , as well as the substitution of CaO for SrO with the total contents unchanged, the structural and physico-chemical properties of the glass was investigated by Raman spectroscopy and other measurements. The results showed that the short-range disorder brought by the substitution of GeO 2 , B 2 O 3 and P 2 O 5 for SiO 2 could weaken the stability and compactness of the glass network, and the physico-chemical properties deteriorated, while the process of glass melting would become easier accordingly. The short-range disorder by the substitution of ZrO 2 for SiO 2 with 1% mole fraction showed a little difference with other samples. Finally, the substitution of modified cations, such as CaO and SrO, showed a smaller variation compared with the substitution of network formers. On the condition of 1% mole fraction substitution of oxides investigated, the variation of samples showed a reasonable change and the performance was basically all satisfied for the use of TFT-LCD substrate.

The melting properties of two kinds of glass substrates for thin film transistor liquid crystal display (TFT-LCD) and organic light-emitting diode (OLED) were investigated. Chemical reaction process of the batches was similar for two substrates determined by DSC-TG test. The ascending behavior of bubbles with different fining agents of two substrates were studied by Hightemperature imaging observation (HTO) test. Viscosity and surface tension for the glass melt were investigated. The results showed that tin dioxide (SnO 2 ) exhibited better fining effect than stannous oxide (SnO), both for TFT-LCD and OLED substrates. For OLED substrate, it took more time to approximate the steady state for fining process due to its higher viscosity and higher surface tension. The molten resistance of these two substrates was also determined, which could provide some reference for the design of electrode in mass production. And the effect of grain size distribution of main raw material silica sand on the melting quality of bulk glass samples was also developed. Silica sand with 150-200 mesh exhibited the best melting and fining effect.

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