The behaviour of catalyst free GaAs nanowire growth is investigated on (111)Si substrate by molecular beam epitaxy under different Ga and As fluxes. It is found that the diameter of nanowire is increased by increasing the Ga flux, while it is decreased by increasing the As flux. The growth rate along the wire axis is enhanced by increasing the As flux under a constant Ga flux. Moreover, the Ga droplet at the top disappears by the growth interruption and the growth along the wire axis is strictly prohibited. By adopting the last result, the growth of GaAs/AlGaAs core‐shell structure is attempted. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

We have grown InGaN nanowires (NWs) on a (111)Si substrate directly by radio‐frequency plasma‐assisted molecular beam epitaxy (RF‐MBE), and investigated their In compositional distribution by energy dispersive x‐ray spectroscopy (EDX). The In composition line profiles of InGaN NWs measured by EDX are different at each position in the InGaN NWs, and In is most easily incorporated into the top of NWs. The In composition at the top of the NWs depends on the growth temperature and the In flux ratio. However, the In compositions at other positions is not dependent on these factors. Thus, these results might be due to the limited diffusion of In atoms from the top of the NWs towards the NWs/Si interface. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

No abstract

No abstract

No abstract