All spin logic device (ASLD) is a potential beyond-CMOS option for future digital logic application. However, magnetic reversal only using spin transfer torque (STT) in initial device structure degrades its performance. In this paper, we propose a magneto-electric (ME) effect assisted ASLD (ME-ASLD), which significantly shortens the device's switching delay and improves energy efficiency. A magnetization-dynamics/spin-transport hybrid model has been developed for analyzing the operation and performance of the ME-ASLD. The simulation results show that the ME switching delay remains unchanged and the ME energy dissipation decreases linearly with the decreasing of ME layer thickness under the condition of fixed ratio of voltage to thickness, and the magnetization rotation driven by ME effect is more effective than by STT effect. Most importantly, compared with ASLD, the proposed ME-ASLD achieves about 15.3× shorter switching delay and 12.6× lower energy dissipation. Moreover, the ME-ASLD prefers to operate at lower voltage which leads to lower energy-delay product and ultra-low energy dissipation.

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