The electrochemical conversion of CO2 and H2O into liquid fuel is ideal for high-density renewable energy storage and could provide an incentive for CO2 capture. However, efficient electrocatalysts for reducing CO2 and its derivatives into a desirable fuel are not available at present. Although many catalysts can reduce CO2 to carbon monoxide (CO), liquid fuel synthesis requires that CO is reduced further, using H2O as a H(+) source. Copper (Cu) is the only known material with an appreciable CO electroreduction activity, but in bulk form its efficiency and selectivity for liquid fuel are far too low for practical use. In particular, H2O reduction to H2 outcompetes CO reduction on Cu electrodes unless extreme overpotentials are applied, at which point gaseous hydrocarbons are the major CO reduction products. Here we show that nanocrystalline Cu prepared from Cu2O ('oxide-derived Cu') produces multi-carbon oxygenates (ethanol, acetate and n-propanol) with up to 57% Faraday efficiency at modest potentials (-0.25 volts to -0.5 volts versus the reversible hydrogen electrode) in CO-saturated alkaline H2O. By comparison, when prepared by traditional vapour condensation, Cu nanoparticles with an average crystallite size similar to that of oxide-derived copper produce nearly exclusive H2 (96% Faraday efficiency) under identical conditions. Our results demonstrate the ability to change the intrinsic catalytic properties of Cu for this notoriously difficult reaction by growing interconnected nanocrystallites from the constrained environment of an oxide lattice. The selectivity for oxygenates, with ethanol as the major product, demonstrates the feasibility of a two-step conversion of CO2 to liquid fuel that could be powered by renewable electricity.

The critical size limit of electric polarization remains a fundamental question in nanoscale ferroelectric research 1 . As such, the viability of ultrathin ferroelectricity greatly impacts emerging low-power logic and nonvolatile memories 2 . Size effects in ferroelectrics have been thoroughly investigated for perovskite oxides -the archetypal ferroelectric system 3 . Perovskites, however, have so far proved unsuitable for thickness-scaling and integration with modern semiconductor processes 4 . Here, we report ultrathin ferroelectricity in doped-HfO2, a fluorite-structure oxide grown by atomic layer deposition on silicon. We demonstrate the persistence of inversion symmetry breaking and spontaneous, switchable polarization down to 1 nm. Our results indicate not only the absence of a ferroelectric critical thickness, but also enhanced polar distortions as film thickness is reduced, contradictory to perovskite ferroelectrics. This work shifts the focus on the fundamental limits of ferroelectricity to simpler transition metal oxide systems -from perovskite-derived complex oxides to fluoritestructure binary oxides -in which 'reverse' size effects counter-intuitively stabilize polar symmetry in the ultrathin regime.Ferroelectric materials exhibit stable states of collectively ordered electrical dipoles whose polarization can be reversed under an applied electric field 5 . Consequently, ultrathin ferroelectrics are of great technological interest for high-density electronics, particularly field-effect transistors and nonvolatile memories 2 . However, ferroelectricity is typically suppressed at the few nanometer scale in the ubiquitous perovskite oxides 6 . First-principles calculations predict six unit cells as the critical thickness in perovskite ferroelectrics 1 due to incomplete screening of depolarization fields 3 . Atomic-scale ferroelectricity in perovskites often fail to demonstrate polarization switching 7,8 , a crucial ingredient for application. Furthermore, attempts to synthesize ferroelectric perovskite films on silicon 9,10 are plagued by chemical incompatibility 4,11 and high temperatures required for epitaxial growth. Since the discovery of ferroelectricity in HfO2-based thin films in 2011 12 , fluorite-structure binary oxides (fluorites) have attracted considerable interest 13 as they enable lowtemperature synthesis and conformal growth in three-dimensional (3D) structures on silicon 14,15 , thereby overcoming many of the issues that restrict its perovskite counterparts in terms of complementary metal-oxide-semiconductor (CMOS) compatibility and thickness scaling 16 .

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The growing interest in two-dimensional imine-based covalent organic frameworks (COFs) is inspired by their crystalline porous structures and the potential for extensive π-electron delocalization. The intrinsic reversibility and strong polarization of imine linkages, however, leads to insufficient chemical stability and optoelectronic properties. Developing COFs with improved robustness and π-delocalization is highly desirable but remains an unsettled challenge. Here we report a facile strategy that transforms imine-linked COFs into ultrastable porous aromatic frameworks by kinetically fixing the reversible imine linkage via an aza-Diels-Alder cycloaddition reaction. The as-formed, quinoline-linked COFs not only retain crystallinity and porosity, but also display dramatically enhanced chemical stability over their imine-based COF precursors, rendering them among the most robust COFs up-to-date that can withstand strong acidic, basic and redox environment. Owing to the chemical diversity of the cycloaddition reaction and structural tunability of COFs, the pores of COFs can be readily engineered to realize pre-designed surface functionality.

Grain boundaries are observed and characterized in chemical vapor deposition-grown sheets of hexagonal boron nitride (h-BN) via ultra-high-resolution transmission electron microscopy at elevated temperature. Five- and seven-fold defects are readily observed along the grain boundary. Dynamics of strained regions and grain boundary defects are resolved. The defect structures and the resulting out-of-plane warping are consistent with recent theoretical model predictions for grain boundaries in h-BN.