Two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors are promising materials for realizing band-to-band tunneling devices owing to the atomically thin layer and abrupt interface of their heterostructures. In this study, we transferred scalable few-atomic-layer thin films using metal-organic chemical vapor deposition (MOCVD)-grown molybdenum disulfide (MoS2) as an n-channel and CVD-grown molybdenum ditelluride (MoTe2) and tungsten diselenide (WSe2) as p-channels to build van der Waals vertical heterostructures. The heterostructures of intrinsic MoS2 and MoTe2 (or WSe2), each having n-type, ambipolar, or high p-type conductivity, were suitable for tunneling field-effect transistor (TFET) applications. We measured the electrical transport properties of the MoS2/MoTe2 (or WSe2) heterostructures using an ion-gel top gate. The fabricated TFET with MoS2/MoTe2 (or WSe2) heterostructures exhibits a subthreshold swing as low as 9.1 (or 7.5) mV/dec. The negative differential transconductance, negative differential resistance, and temperature-dependent I–V characteristics demonstrate the band-to-band tunneling process. The findings have significant potential for applications in the large-area production of next-generation wearable, stretchable, and flexible low-power electronic devices.

Ultrathin Cu­(In,Ga)­Se2 (CIGSe) solar cells can be fabricated using various back contact materials. Among those back contact materials, transparent conductive oxides have enabled a lot of applications in semitransparent ultrathin (STUT) CIGSe solar cells. Especially, tin-doped indium oxide (ITO) has been used as a back contact material to fabricate STUT CIGSe solar cells because of its high transparency and conductivity. However, the CIGSe absorber layer deposited on ITO substrates is known to form an undesirable GaO x layer at high processing temperatures owing to Ga diffusion. To improve the back contact properties at the CIGSe and ITO interface, sulfur treatment of the ITO back electrode was conducted. Its rear-side interface analysis indicated that the GaO x interfacial layer changed to a mixed interfacial layer upon undergoing sulfur treatment, wherein the GaS x and GaO x phases were formed at the CIGSe/ITO rear-side interface. A fundamental investigation of the material properties implied that GaO x and GaS x have different energy band alignments at the rear-side interface and that GaS x can be more helpful for hole extraction than the GaO x phase. After fabrication of the STUT CIGSe solar cell, the power conversion efficiency with an optimal sulfur-treatment time of 5 min increased to 9.0% while that of the control solar cell on bare ITO (i.e., without sulfur treatment) remained at 7.0%. The results suggested that the composition and characteristics of the interfacial layer had a substantial impact on the photovoltaic properties of the STUT CIGSe solar cells.