A stretchable resistive pressure sensor is achieved by coating a compressible substrate with a highly stretchable electrode. The substrate contains an array of microscale pyramidal features, and the electrode comprises a polymer composite. When the pressure-induced geometrical change experienced by the electrode is maximized at 40% elongation, a sensitivity of 10.3 kPa(-1) is achieved.

The effects of the surface energy of polymer gate dielectrics on pentacene morphology and the electrical properties of pentacene field‐effect transistors (FETs) are reported, using surface‐energy‐controllable poly(imide‐siloxane)s as gate‐dielectric layers. The surface energy of gate dielectrics strongly influences the pentacene film morphology and growth mode, producing Stranski–Krastanov growth with large and dendritic grains at high surface energy and three‐dimensional island growth with small grains at low surface energy. In spite of the small grain size (≈ 300 nm) and decreased ordering of pentacene molecules vertical to the gate dielectric with low surface energy, the mobility of FETs with a low‐surface‐energy gate dielectric is larger by a factor of about five, compared to their high‐surface‐energy counterparts. In pentacene growth on the low‐surface‐energy gate dielectric, interconnection between grains is observed and gradual lateral growth of grains causes the vacant space between grains to be filled. Hence, the higher mobility of the FETs with low‐surface‐energy gate dielectrics can be achieved by interconnection and tight packing between pentacene grains. On the other hand, the high‐surface‐energy dielectric forms the first pentacene layer with some voids and then successive, incomplete layers over the first, which can limit the transport of charge carriers and cause lower carrier mobility, in spite of the formation of large grains (≈ 1.3 μm) in a thicker pentacene film.

We developed a novel interface engineering strategy for highly stable and efficient SnO2-based planar-perovskite solar cells.

Polymeric semiconductors have demonstrated great potential in the mass production of low-cost, lightweight, flexible, and stretchable electronic devices, making them very attractive for commercial applications. Over the past three decades, remarkable progress has been made in donor-acceptor (D-A) polymer-based field-effect transistors, with their charge-carrier mobility exceeding 10 cm 2 V −1 s −1 . Numerous molecular designs of D-A polymers have emerged and evolved along with progress in understanding the charge transport physics behind their high mobility. In this review, the current understanding of charge transport in polymeric semiconductors is covered along with significant features observed in high-mobility D-A polymers, with a particular focus on polymeric microstructures. Subsequently, emerging molecular designs with further prospective improvements in charge-carrier mobility are described. Moreover, the current issues and outlook for future generations of polymeric semiconductors are discussed.

A dopant–free polymeric hole transport material (HTM), RCP, based on benzo[1,2-b:4,5:b′]dithiophene and 2,1,3-benzothiadiazole exhibited a high efficiency of 17.3% in a perovskite solar cell and maintained its initial efficiency for over 1400 hours.