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In this paper, β-Ga 2 O 3 films were deposited on c-plane sapphire substrates by metal-organic chemical vapor deposition. The impact of oxygen flow rate on crystalline quality, surface morphology, optical transmittance, and growth rate were systematically investigated. X-ray diffraction revealed that β-Ga 2 O 3 films preferentially grew along (−201) crystal plane family when grown on sapphire substrates, and the full-width at half maximum indicated that the crystal quality of β-Ga 2 O 3 film was improved by increasing the oxygen flow rate. The oxygen flow rate greatly influenced the surface morphology and growth rate, and the optical band gaps of β-Ga 2 O 3