In this work, a MAPbBr3 quantum dot (QD-MAPbBr3) layer was prepared by a simple and rapid method. Octylammonium bromide (OABr) gives the MAPbBr3 better exciton binding energy, good surface morphology, and stability. To form a nanocrystalline thin film on indium tin oxide (ITO) glass, the QD-MAPbBr3 film was coated by a spin-coating method in a nitrogen-filled glove box and the NiOx film was used as an adhesive layer and hole transport layer. The highest transmittance of MAPbBr3 on NiOx/ITO glass was around 75% at 700 nm. This study also reported a high transparent and perovskite bulk-free ITO/NiOx/QD-MAPbBr3/C60/Ag solar cell where the NiOx, QD-MAPbBr3, and C60 were used as a hole transport layer, active layer, and electron transport layer, respectively.

Ge-Sb-Sn inorganic resist materials are developed to fabricate submicron structures that have a pattern size smaller than 150 nm and a depth over 100 nm via thermal lithography. The materials are sputtered under Ar:O 2 atmospheres by varying O 2 flow rate and Ge level. Both increasing O 2 flow rate and Ge level can decrease the extinction coefficient, k , at 405 nm wavelength to within a range of 0.58-0.89. Films with appropriate absorption of laser power are chosen to optimize exposure and development processes. A continuous 2.0 mW laser power is used to crystallize the Ge-Sb-Sn-O films. 175-nm-wide and 107-nm-deep grooves are formed after development using alkaline solutions. The 175 nm width is well below half of the 380 nm diffraction limit. A laser pulse strategy is also developed to fabricate discrete dot patterns. By shortening the write 1 time to 0.5 T (7.8 ns), the dot patterns change from oval to round shape. A pit pattern as small as 140 nm diameter and 100 nm depth is achieved.

No abstract

No abstract

No abstract