Bulk III-nitride materials MN (M = Al, Ga and In) and their alloys have been widely used in high-power electronic and optoelectronic devices, but stable two-dimensional (2D) III-nitride materials, except h-BN, have not been realized yet. A new kind of 2D III-nitride material M2Si2N4 (M = Al, Ga and In) is predicted by choosing Si as the appropriate passivation element. The stability, electronic and optical properties of 2D M2Si2N4 materials are studied systematically based on first-principles calculations. The results show that Al2Si2N4 and Ga2Si2N4 are found to be indirect bandgap semiconductors, while In2Si2N4 is a direct bandgap semiconductor. Moreover, Al2Si2N4 and In2Si2N4 have good absorption ability in the visible light region, while Ga2Si2N4 is an ultraviolet-light-absorbing material. Furthermore, the carrier lifetimes of Ga2Si2N4 and In2Si2N4 are as large as 157.89 and 103.99 ns, respectively. All these desirable properties of M2Si2N4 materials make them attractive for applications in electronics and photoelectronics.

The lack of efficient catalysts and research on the mechanism for the methanol oxidation reaction (MOR) impedes the development of direct methanol fuel cells. In this work, based on density functional theory calculations, we systematically investigated the activity trends of electrochemical MOR on a single transition-metal atom embedded in N-coordinated graphene (M@N4C). By calculating the free energy diagrams of MOR on M@N4C, Co@N4C was screened out to be the most effective MOR catalyst with a low limiting potential of 0.41 V due to the unique charge transfers and electronic structures. Importantly, one- and two-dimensional volcano relationships in MOR on M@N4C catalysts are established based on the d-band center and the Gibbs free energy of normalΔ G *C normalH 3 normalO normalH and ΔG *CO, respectively. In one word, this work provides theoretical guides toward the improved activity of MOR on M@N4C and hints for the design of active and efficient MOR electrocatalysts.

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