We have demonstrated a passively mode-locked diode end-pumped all-solid-state laser, which is composed of a Nd:Gd0.5Y0.5VO4 crystal and a folded cavity with a semiconductor saturable-absorber mirror grown by metal-organic chemical-vapor deposition. Stable cw mode locking with a 3.8-ps pulse duration at a repetition rate of 112 MHz was obtained. At 13.6 W of the incident pump power, a clean mode-locked fundamental-mode average output power of 3.9 W was achieved with an overall optical-to-optical efficiency of 29.0%, and the slope efficiency was 38.1%.
Hydrogenated amorphous silicon carbide films with an organic–inorganic compound structure were fabricated by using organic carbon source xylene (C8H10), in a traditional radio frequency plasma-enhanced chemical vapor deposition system. Strong full-color light emission ranging from 630 to 420 nm was observed at room temperature. The results of photoluminescence and photoluminescence excitation experiments showed the emission was originated from the radiative recombination at band tails of the inorganic SiC matrix. Moreover, luminescence from the transition between discrete energy levels, which were associated with organic π-conjugated carbon systems, was also observed at resonant excitation conditions.
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