In this study, diamond pseudo-vertical architecture Schottky barrier diodes (PVSBDs) through the patterning tungsten growth method have been investigated. The forward current density is 16 A/cm2 at 5 V, and a rectification ratio is more than 5 orders of magnitude at ±5 V for diamond PVSBD. The reverse breakdown voltage is 640 V, and the corresponding electrical field is 4.57 MV/cm. These results are obtained by patterning tungsten (W) on the diamond surface as a blocking layer and growing a diamond epitaxial layer on the uncovered zone. A W/diamond ohmic contact was formed during the diamond epitaxial layer growth process. An aluminum film was used as a Schottky contact. Overall, the results illustrate that W patterned growth to fabricate PVSBD is efficient.

In this article, a nanosecond pulse generation circuit is designed and fabricated based on a commercial Si-p-i-n rectifier diode using the DSRD principle. The circuit is composed of four parallel stacks with a 3-kV pulse output and a rise time of less than 2 ns. Each stack contains four diodes in a series. The working principle and main parameters of the circuit are analyzed by Pspice, and the simulation results are consistent with the experimental results. Switching cutoff speed, reverse voltage, offset voltage, and the topological circuit structure of connecting the rectifier diodes affect the amplitude and rise time of the output pulse.