Palladium diselenide (PdSe 2 ), a noble transition metal dichalcogenide has attracted increasing attention in recent years due to its outstanding semiconductor properties. In this study, 2D PdSe 2 nanofilms with thicknesses ranging from 2 to 28 nm and their heterostructures with Si substrates (PdSe 2 /Si heterostructures) were synthesized via a simple selenization method. Electrical transport characterizations based on field-effect transistor devices indicate that the few-layer PdSe 2 nanofilms exhibit a p-type semiconducting behavior. The optimal sensing performance of the PdSe 2 /Si-8 sensor (8 nm-thick PdSe 2 ) exhibits a comparable response toward NO 2 gas (ΔR/R a = ∼7.2% to 100 ppb and ∼18% to 1 ppm) at room temperature (RT). This response may result from the heterostructure effect and maze-type surface. Additionally, the PdSe 2 /Si-8 sensor has selectivity toward NO 2 compared with other gases including NO, H 2 , CO, NH 3 , and C 2 H 5 OH. Furthermore, density functional theory (DFT) calculations reveal the largest adsorption energy and charge transfer between NO 2 and the PdSe 2 surface, which coincides well with the experimental results. Moreover, the PdSe 2 /Si-8 sensor also exhibits repeatability and long-term stability during about 4 months at RT. These results indicate that the PdSe 2 /Si heterostructures may be a promising nanomaterial for room-temperature NO 2 gassensing devices.

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The fabrication of van der Waals (vdWs) heterostructures mainly extends to two-dimensional (2D) materials. Nevertheless, current processes for obtaining high-quality 2D films are mainly exfoliated from their bulk counterparts or...

Palladium diselenide (PdSe2), as a member of two-dimensional dichalcogenides, has a puckered pentagonal structure and tends to exhibit distinct physical properties due to the various polymorphic phases. In contrast to conventionally orthorhombic PdSe2 (O-PdSe2), the fabrication of continuous metastable monoclinic PdSe2 (M-PdSe2) remains a challenge. Here, we report the polymorphic integration of orthorhombic and monoclinic PdSe2 crystals by concisely controlled selenization engineering under Se-sufficient and Se-deficient growth conditions. Thus, the hybrid O-PdSe2/M-PdSe2 (O/M-PdSe2) nanostructures were fabricated for the first time. We found that the O/M-PdSe2 nanostructures may be used as the broadband photodetector with a relatively high responsivity of 211.4 mA W–1, laying the foundation for the expansion of high-performance photoexcited gas sensors operating at room temperature. The O/M-PdSe2 sensor exhibited extremely fast response and recovery times (132/84 s) toward 10 ppm NO2 gas under 405 nm light illumination compared to the dark condition. In addition, according to the optical absorption spectra and ultraviolet photoemission spectroscopy analyses, the energy band alignment at the O/M-PdSe2 interface was determined, and the detailed gas-sensing mechanism was also proposed on this basis. This work realizes the continuous fabrication of the hybrid O/M-PdSe2 nanostructures with promisingly combined photoelectric and gas-electric properties, which may promote the development of high-performance multifunctional nanoelectronic devices to meet the global challenges of energy shortage and environmental protection.

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