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We demonstrate the coexistence and conversion of the unipolar and bipolar resistive switching behavior in Pt/Li1+xAlxTi2−x(PO4)3 (LATP)/Pt structures fabricated by sputtering. The dielectric constant (k) of the LATP film equals 12.0. After the electroforming, the Pt/LATP/Pt resistive switching device exhibits either unipolar switching mode (URS) or bipolar switching mode (BRS). The switching mode can be freely converted between URS and BRS with the same compliance current. This will provide a foundation for a switching mode called any-polar switching mode. The switching mechanism is believed to be related to the formation and rupture of conductive filaments and the excellent oxygen storage capacitance of the LATP film.

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The special any-polar resistive switching mode includes the coexistence and stable conversion between the unipolar and the bipolar resistive switching mode under the same compliance current. In the present work, the any-polar resistive switching mode is demonstrated when thin Ti intercalations are introduced into both sides of Pt/HfO2/Pt RRAM device. The role of the Ti intercalations contributes to the fulfillment of the any-polar resistive switching working mechanism, which lies in the filament constructed by the oxygen vacancies and the effective storage of the oxygen ion at both sides of the electrode interface.