In this study, tin sulfide thin films were obtained by atomic layer deposition (ALD) using Tetrakis(dimethylamino)tin (TDMASn, [(CH3)2N]4Sn) and hydrogen sulfide (H2S). The growth rate of the tin sulfides (SnSx) was shown to be highly dependent on the deposition temperature, and reaction times of 1 second for the TDMASn and H2S were required to reach the saturation regime. Surface morphologies were smooth or rectangular with rounded corners as observed by a field emission scanning electron microscope (FE-SEM) and were dependent on temperature. X-ray diffraction results confirmed that the crystal structure of SnSx can be tuned by changing the ALD temperature. Below 120 °C, SnSx films appeared to be amorphous. In addition, SnSx films were SnS2 hexagonal at 140 and 150 °C and SnS orthorhombic above 160 °C. Similarly, the values of the optical band gap and binding energy showed significant differences between 150 and 160 °C. The electronic structures of SnSx were extracted by UPS and absorption spectroscopy, and the unsaturated Sn 3d molecular orbital (MO) states in the band edge were found to be responsible for the great improvement in electrical conductivity. This study shows that TDMASn-H2S ALD is an effective deposition method for SnSx films, offering a simple approach to tune the physical properties.

The tuning of electrical properties in oxides via surface and interfacial two-dimensional electron gas (2DEG) channels is of great interest, as they reveal the extraordinary transition from insulating or semiconducting characteristics to metallic conduction or superconductivity enabled by the ballistic transport of spatially confined electrons. However, realizing the practical aspects of this exotic phenomenon toward short-range ordered and air-stable 2DEG channels remains a great challenge. At the heterointerface formed after deposition of an AlO layer on a nanocrystalline InO layer, a dramatic improvement in carrier conduction equivalent to metallic conduction is obtained. A conductivity increase by a factor of 10 times that in raw InO, a sheet resistance of 850 Ω/cm, and a room temperature Hall mobility of 20.5 cm V s are obtained, which are impossible to achieve by tuning each layer individually. The physicochemical origin of metallic conduction is mainly ascribed to the 2D interfacially confined O-vacancies and semimetallic nanocrystalline InO (x < 2) phases by the clustered self-doping effect caused by O-extraction from InO to the AlO phase during ALD. Unlike other submetallic oxides, this 2D channel is air-stable by complete AlO passivation and thereby promises applicability for implementation in devices.

The photochemical tunability of the charge-transport mechanism in metal-oxide semiconductors is of great interest since it may offer a facile but effective semiconductor-to-metal transition, which results from photochemically modified electronic structures for various oxide-based device applications. This might provide a feasible hydrogen (H)-radical doping to realize the effectively H-doped metal oxides, which has not been achieved by thermal and ion-implantation technique in a reliable and controllable way. In this study, we report a photochemical conversion of InGaZnO (IGZO) semiconductor to a transparent conductor via hydrogen doping to the local nanocrystallites formed at the IGZO/glass interface at room temperature. In contrast to thermal or ionic hydrogen doping, ultraviolet exposure of the IGZO surface promotes a photochemical reaction with H radical incorporation to surface metal-OH layer formation and bulk H-doping which acts as a tunable and stable highly doped n-type doping channel and turns IGZO to a transparent conductor. This results in the total conversion of carrier conduction property to the level of metallic conduction with sheet resistance of ∼16 Ω/□, room temperature Hall mobility of 11.8 cm(2) V(-1) sec(-1), the carrier concentration at ∼10(20) cm(-3) without any loss of optical transparency. We demonstrated successful applications of photochemically highly n-doped metal oxide via optical dose control to transparent conductor with excellent chemical and optical doping stability.

The extended application of graphene-based electronic devices requires a bandgap opening in order to realize the targeted device functionality. Since the bandgap tuning of pristine graphene is limited to 360 meV, the chemical modification of graphene is considered essential to achieve a large bandgap opening at the expense of electrical properties degradation. Reduced graphene oxide (RGO) has attracted significant interest for fabricating graphene-based semiconductors since it has several advantages over other forms of chemically modified graphene; such as tunable bandgap opening, decent electrical properties, and easy synthesis. Because of the reduced bonding nature of RGO, the role of metastable oxygen in the RGO matrix is recently highlighted and it may offer emerging ionic devices. In this study, we show that multi-resistivity RGO/n-Si diodes can be obtained by controlling the RGO thickness at a nanometer scale. This is made possible by (1) a metastable lattice-oxygen drift within bulk RGO and (2) electrochemical ambient hydroxyl (OH) formation at the RGO surface. The effect demonstrated in a p-RGO/n-Si heterojunction diode is equivalent to electrochemically driven reversible electronic manipulation and therefore provides an important basis for the application of O bistability in RGO for chemical sensors and electrocatalysis.

Research on harvesting alternative energy sources is of interest to meet human demands for energy while reducing environmental pollution caused by the extensive use of fossil fuels. Thermoelectric materials are a promising technology for converting heat into electricity. Among thermoelectric materials, the binary bismuth telluride system (Bi-Te) is widely used. To produce high-quality BiTe systems with low materials consumption, spark plasma sintering (SPS) is commonly applied. Because SPS is a fast low-temperature process, controlling the ratio and crystallization of BiTe is critical for effective energy conversion. Here, we investigated the quality of BiTe systems formed by SPS compaction of raw powders with an in-depth examination of the oxidation effects on their thermoelectric performance. With increasing measurement temperature (300→420 K), the mechanically mixed sample and a commercial Bi 2 Te 3 alloy (sintered at 533 K) showed differences in Seebeck coefficients (0.245→0.267 and 0.223→0.246 mVK −1 , respectively). The alloy sample showed a decreased figure of merit (0.863→0.331) while that of the mechanically mixed sample (0.543→1.671) increased with temperature. This was related to the degree of oxygen impurity in each BiTe process based on XPS analysis. This study proposes that the integration of oxygen species to BiTe can be considered to maximize the thermoelectric efficiency at the specified temperature.