Roll‐to‐roll (R2R) printed electronic devices have great advantages for developing large scale flexible and disposable devices when compared to current Si‐based technology. For practical realization of these advantages, however, R2R printed devices need to surmount device functionality limitations, most urgently high‐power dissipation and poor device stability. To resolve both imperative challenges at once, herein, an all R2R printed complementary metal‐oxide‐semiconductor (CMOS) 1‐bit code generator with spin‐coated multilayer encapsulation method is developed. In order to print CMOS devices by an all‐R2R gravure printing method, electrical amphoteric property of the single walled carbon nanotube (SWCNT) is utilized to fabricate both p‐type and n‐type SWCNT based thin film transistors (TFTs). In addition, printable encapsulating polymeric materials (CYTOP and FG‐3650) are developed to effectively prevent H2O permeation. The resulting CMOS 1‐bit code generator is able to continuously operate for 2 h under ambient conditions without any variation in output voltage and frequency.