Microcavity is an efficient approach to manufacture colorful semitransparent organic solar cells (ST-OSCs) with high color purity by tailoring the transmission spectrum to narrow peaks. However, in this type of colorful semitransparent devices, high power conversion efficiency (PCE) and high peak transmittance are not yet simultaneously achieved. This paper proposes a new type of microcavity structure to achieve colorful ST-OSCs with both high PCE and high peak transmittance, in which a hybrid Au/Ag electrode is used as a mirror and WO3 is used as a spacer layer. First, it is demonstrated that the hybrid Au/Ag electrode mirror brings about an improvement of 7.7 and 5.5% for PCE and peak transmittance, respectively, when compared with those of the reference devices using the Ag electrode mirror. Specifically, the PCE of the optimized devices reaches the satisfactory value of over 9%, and the peak transmittance is over 25%. This value of PCE is the highest one reported so far for the microcavity-based ST-OSCs with the same peak transmittance. Second, it is demonstrated that the second-order resonance of the microcavity can be used to improve the color purity of green ST-OSCs by narrowing the transmission peak, and the combination of the second-order and third-order resonance can be used to construct colorful ST-OSCs with mixed colors. Thus, a novel approach is developed to tune the color of ST-OSCs, which is based on high-order resonance modes of the microcavity.

Tungsten oxide (WO 3 ) electrochromic devices have attracted a lot of interest in the energy conservation field and have shown a preliminary application potential in the market. However, it is difficult to quantitatively direct experiments with the existing electrochromic theoretical models, which can restrict the further development of electrochromism. Here, an electrochromic physical simulation model of WO 3 films was built to solve the above problem. Experimentally, the actual electrochromic kinetics of WO 3 in the LiClO 4 /propylene carbonate electrolyte was determined as a continuous electron-transfer process by cyclic voltammetry measurement and X-ray photoelectron spectroscopy analysis. Theoretically, the continuous electron-transfer process, Li + -ion diffusion process, and the transmittance change process were described by a modified Butler−Volmer equation, Fick's law, and charge versus coloration efficiency/bleaching efficiency coupling equation, respectively. The comparisons between theoretical and experimental data were conducted to verify this model. The shape of the simulated current curves was basically consistent with that of experiments. Besides, the difference of transmittance between the simulation and experiments was less than 8%. The difference between theory and experiment was attributed to the influence of the electric double layer and the actual reaction interface. The success of the simulation was attributed to the accurate description of the electrochromic process by continuous electron-transfer kinetics. This model can be applied in the research of electrochromic mechanisms, experimental result prediction, and novel device development due to its clear physical nature.

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Flexible thin-film transistors with high current-driven capability are of great significance for the next-generation new display technology. The effect of a Cu-Cr-Zr (CCZ) copper alloy source/drain (S/D) electrode on flexible amorphous neodymium-doped indium-zinc-oxide thin-film transistors (NdIZO-TFTs) was investigated. Compared with pure copper (Cu) and aluminum (Al) S/D electrodes, the CCZ S/D electrode changes the TFT working mode from depletion mode to enhancement mode, which is ascribed to the alloy-assisted interface layer besides work function matching. X-ray photoelectron spectroscopy (XPS) depth profile analysis was conducted to examine the chemical states of the contact interface, and the result suggested that chromium (Cr) oxide and zirconium (Zr) oxide aggregate at the interface between the S/D electrode and the active layer, acting as a potential barrier against residual free electron carriers. The optimal NdIZO-TFT exhibited a desired performance with a saturation mobility (μsat) of 40.3 cm2·V-1·s-1, an Ion/Ioff ratio of 1.24×108, a subthreshold swing (SS) value of 0.12 V·decade-1, and a threshold voltage (Vth) of 0.83 V. This work is anticipated to provide a novel approach to the realization of high-performance flexible NdIZO-TFTs working in enhancement mode.