Defect-induced tunable permittivity of Epsilon-Near-Zero (ENZ) in indium tin oxide (ITO) thin films via annealing at different temperatures with mixed gases (98% Ar, 2% O2) was reported. Red-shift of λENZ (Epsilon-Near-Zero wavelength) from 1422 nm to 1995 nm in wavelength was observed. The modulation of permittivity is dominated by the transformation of plasma oscillation frequency and carrier concentration depending on Drude model, which was produced by the formation of structural defects and the reduction of oxygen vacancy defects during annealing. The evolution of defects can be inferred by means of X-ray diffraction (XRD), atomic force microscopy (AFM), and Raman spectroscopy. The optical bandgaps (Eg) were investigated to explain the existence of defect states. And the formation of structure defects and the electric field enhancement were further verified by finite-difference time domain (FDTD) simulation.

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In this article, an ultrathin terahertz dual band metamaterial absorber made up of patterned asymmetrical double-split rings and a continuous metal layer separated by a thin FR-4 layer is designed. Simulation results show that two almost identical strong absorption peaks appear in the terahertz band. When the incident electric field is perpendicular to the ring gaps located at 11 µm asymmetrically, the absorptivity of 98.6% at 4.48 THz and 98.5% at 4.76 THz can be obtained. The absorption frequency and the absorptivity of the absorber can be modulated by the asymmetric distribution of the gaps. The perfect metamaterial absorber is expected to provide important reference for the design of terahertz modulator, filters, absorbers, and polarizers.

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We designed an ultra-thin dual-band metamaterial absorber by adjusting the side strips’ length of an H-shaped unit cell in the opposite direction to break the structural symmetry. The dual absorption peaks approximately 99.95% and 99.91% near the central resonance frequency of 4.72 THz and 5.0 THz were obtained, respectively. Meanwhile, a plasmon-induced transmission (PIT) like reflection window appears between the two absorption frequencies. In addition to theoretical explanations qualitatively, a multi-reflection interference theory is also investigated to prove the simulation results quantitatively. This work provides a way to obtain perfect dual-band absorption through an asymmetric metamaterial structure, and it may achieve potential applications in a variety of fields including filters, sensors, and some other functional metamaterial devices.