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Resistive random-access memory (ReRAM) has been of wide interest for its potential to replace flash memory in the next-generation nonvolatile memory roadmap. In this study, we have fabricated the Au/ZnO-nanowire/Au nanomemory device by electron beam lithography and, subsequently, utilized in situ transmission electron microscopy (TEM) to observe the atomic structure evolution from the initial state to the low-resistance state (LRS) in the ZnO nanowire. The element mapping of LRS showing that the nanowire was zinc dominant indicating that the oxygen vacancies were introduced after resistance switching. The results provided direct evidence, suggesting that the resistance change resulted from oxygen migration.

Yellow emission is crucial in RGBY display technology and in fabricating physiologically friendly, low color‐temperature lighting sources. Emitters with both wet‐ and dry‐process feasibility are highly desirable to fabricate, respectively, high‐quality devices via vapor deposition and cost‐effective, large‐area devices via roll‐to‐roll fabrication. Here, high‐efficiency organic light‐emitting diodes with a novel wet‐ and dry‐process feasible yellow‐emitting iridium complex, bis[5‐methyl‐7‐fluoro‐5H‐benzo(c)(1,5) naphthyridin‐6‐one]iridium (picolinate), are demonstrated. By spin coating, the device shows, at 1000 cd m−2, an external quantum efficiency (EQE) of 18.5% with an efficacy of 52.3 lm W−1, the highest among all reported yellow devices via wet‐process, while using vapor deposition, the EQE is 22.6% with a 75.1 lm W−1 efficacy, the highest among all dry‐processed counterparts. The high efficiency may be attributed to the replacement of the hydrogen atom with a fluorine atom on a 2‐substitutional site in the emitter to prevent dense molecular packing‐caused self‐quenching and to reduce radiationless deactivation rates, leading to a high quantum yield (71%).

The flow of Mask R-CNN model for processing digital polymerase chain reaction (dPCR) fluorescence images.