To reduce energy losses in water electrolysers a fundamental understanding of the water oxidation reaction steps is necessary to design efficient oxygen evolution catalysts. Here we present CoOx/Ti electrocatalytic films deposited by thermal and plasma enhanced chemical vapor deposition (CVD) onto titanium substrates. We report electrochemical (EC), photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) measurements. The electrochemical behavior of the samples was correlated with the chemical and electronic structure by recording XPS spectra before and after each electrochemical treatment (conditioning and cyclovoltammetry). The results show that the electrochemical behavior of CoOx/Ti strongly depends on the resulting electronic structure and composition. The thermal deposition leads to the formation of a pure Co(II)Ox which transforms to a mixed Co(II)Co(III)Ox during the OER. This change in oxidation state is coupled with a decrease in overpotential from η = 0.57 V to η = 0.43 V at 5 mA cm(-2). Plasma deposition in oxygen leads to a Co(III)-dominated mixed CoOx, that has a lower onset potential as deposited due to a higher Co(III) content in the initial deposited material. After the OER XPS results of the CoOx/Ti indicate a partial formation of hydroxides and oxyhydroxides on the oxide surface. Finally the plasma deposition in air, results in a CoOxOH2 surface, that is able to completely oxidizes during OER to an oxyhydroxide Co(III)OOH. With the in situ formed CoOOH we present a highly active catalyst for the OER (η = 0.34 at 5 mA cm(-2); η = 0.37 V at 10 mA cm(-2)).

GaP, with its large band gap of 2.26 eV (indirect) and 2.78 eV (direct), is a very promising candidate for direct photoelectrochemical water splitting. Herein, p-GaP(100) is investigated as a photocathode for hydrogen generation. The samples are characterized after each preparation step regarding how their photoelectrochemical behavior is influenced by surface composition and structure using a combination of electrochemical and surface-science preparation and characterization techniques. The formation of an Ohmic back contact employing an annealed gold layer and the removal of the native oxides using various etchants are studied. It turns out that the latter has a pronounced effect on the surface composition and structure and therefore also on the electronic properties of the interface. The formation of a thin Ga(2)O(3) buffer layer on the p-GaP(100) surface does not lead to a clear improvement in the photoelectrochemical efficiency, neither do Pt nanocatalyst particles deposited on top of the buffer layer. This behavior can be understood by the electronic structure of these layers, which is not well suited for an efficient charge transfer from the absorber to the electrolyte. First experiments show that the efficiency can be considerably improved by employing a thin GaN layer as a buffer layer on top of the p-GaP(100) surface.

Using photoelectron spectroscopy (PES), deep (around 1.2 eV below Fermi level) and shallow (around 0.2 eV below Fermi level) gap states are investigated in differently prepared TiO 2 samples: In situ cleaved single anatase crystal TiO 2 (101) surface, sintered slurry of nanocrystalline anatase, amorphous atomic layer deposited (ALD) titania, and nanocrystalline anatase transformed by annealing from ALD titania. Deep gap states are generally attributed to under-coordinated Ti atoms due to oxygen defects. The origin of shallow gap states is unclear. PES on in situ cleaved anatase TiO 2 (101) surfaces show in part no or weak emission from deep, but always weak emission from shallow gap states. Amorphous ALD titania initially is free of gap states, but deep gap states are easily induced by exposure to synchrotron radiation, while shallow gap states do not form. Exposure to synchrotron radiation also induced deep gap states in in situ cleaved single crystal (101) surfaces and in the nanoporous anatase films, whereas emission from shallow gap states stays constant. Amorphous ALD films transform to anatase nanocrystals by annealing as shown by XRD and AFM and show deep and shallow gap state emissions similar to the nanoporous anatase films prepared by sintering spin coated anatase slurry. Atomic force microscopy (AFM) reveals the presence of terraces on the cleaved (101) surfaces. The comparison of the data collected on the differently prepared anatase and amorphous titania samples suggest assigning shallow gap states to under-coordinated Ti atoms located at edge sites. Conformal amorphous films that show no edges in AFM, accordingly have no shallow gap states.

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A photovoltaic tandem cell made of amorphous silicon (a-Si) and microcrystalline silicon (μc-Si) was investigated as a photocathode for hydrogen evolution in a photoelectrochemical device. The electronic and electrochemical properties of the samples were characterized using X-ray photoemission spectroscopy (XPS) and cyclic voltammetry (CV), whereas the morphology of the surface in contact with the electrolyte was investigated by scanning electron microscopy (SEM). The electric efficiency of the tandem cell was determined to be 5.2% in a photoelectrochemical (PEC) setup in acidic solution which is only about half of the photovoltaic efficiency of the tandem cell. A significant improvement in efficiency was achieved with platinum as a catalyst which was deposited by physical vapour deposition (PVD) under ultra-high vacuum (UHV) conditions.