ZnO thin films with Cd/Zn nominal ratios of 0 %, 1 %, 3 %, 5 %, and 7 % and thickness of 0.7 µm were prepared by chemical spray pyrolysis. X-ray diffraction patterns showed that the films have polycrystalline structures and peaks matching the hexagonal ZnO structure. Crystallite sizes ranged from about 35 nm to 87 nm. As the doping concentration increased, full width at half maximum values decreased and crystallite sizes increased. The UV-Vis spectra of the ZnO:Cd films showed high transparency in the visible region. The optical band gap of the ZnO:Cd films decreased from 3.255 eV to 3.17 eV with increasing Cd doping concentration. The transition type was direct, thereby allowing transition. The ZnO:Cd thin films were annealed at 400 °C, and annealing treatment showed improvements in the properties of the derived films.

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ZnO thin films with Cd/Zn nominal ratios of 0%, 1%, 3%, 5%, and 7% and thickness of 0.7 μm were prepared by chemical spray pyrolysis. X-ray diffraction patterns showed that the films have polycrystalline structures and peaks matching the hexagonal ZnO structure. Crystallite sizes ranged from about 35 nm to 87 nm. As the doping concentration increased, full width at half maximum values decreased and crystallite sizes increased. The UV-Vis spectra of the ZnO:Cd films showed high transparency in the visible region. The optical band gap of the ZnO:Cd films decreased from 3.255 eV to 3.17 eV with increasing Cd doping concentration. The transition type was direct, thereby allowing transition. The ZnO:Cd thin films were annealed at 400 °C, and annealing treatment showed improvements in the properties of the derived films.

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This work focuses discusses the structural and optical properties of Cerium-Cupric oxide thin film prepared on silicon and glass substrate by the spray pyrolysis technique at a temperature of 200,250,300 C. The results of (XRD) tests showed that all the prepared films were of a polycrystalline installation and monoclinic crystal structure with a preferable direction was (11 -1) of CuO. Morphology analysis studied by atomic force microscopy (AFM) and reveals that the grain size of the prepared thin film is approximately (64.69-101.26)nm , with a surface roughness of (0.238-0.544) nm as well as root mean square of (0.280-0.636)nm for CuO Ce-doping, Optical characteristics were studied by UV/VIS Spectrophotometer at (300-1100 nm) and observed that the transmission value was more than 80 % at the visible wavelength range. The direct energy gap (Eg 7 -C substrate when, is measured by UV/VIS.