During the first 20 years of TRUMPF's existence as a laser company, it developed a reputation for standard products for applications, now referred to as the traditional industrial applications: laser cutting and welding of steel and aluminum. During the same time, TRUMPF acquired five basic technology platforms -fast-flow and diffusion-cooled CO 2 lasers, thin disk, diode and fiber lasers.The standard products cover only a small section of the multi-dimensional parameter space that can be covered with these five basic technologies. These platforms, however, provide enormous flexibility and highly reliable building blocks that are now used to fill white areas in the parameter space, enabling novel applications unrelated to the original applications for these technologies.Presented are some examples of how the scaling of these technologies has led to unique and novel laser devices and applications. They include the generation of EUV with CO 2 lasers, short-pulse applications with diffusion-cooled and fast-flow CO 2 lasers for processing of composite materials and plastics. Laser output power, the traditional main characteristic for CO 2 lasers, made way for pulse energies, pulse lengths and wavelength. The traditional cw thin disk laser platform was transformed into short and ultra-short pulse lasers with wavelengths down to 343 nm. Diode lasers evolved from low brightness pump sources for thin disk lasers to diode direct lasers.This flexibility will ensure that remaining white spaces in the parameter space can be filled in the future as required.

Universität Gesamthochschule KasselWir haben die Nutzung neuer reflexionsellipsometrischer Meßverfahren für die hochauflösen-de Oberflächenvermessung untersucht. Hierbei wird durch kombinative Auswertung der Strahlungspolarisation zusätzlich zur Oberflächentopografie simultan auch die Materialverteilung an der Oberfläche erfaßt. Ein neuartiges PSA-Ellipsometer mit fokussiertem Meßstrahl (Mikroellipsometer) mißt durch Abscannen der Oberfläche die lokalen Verteilungen von vier ellipsometrischen Kenngrößen. Diese Parameter ermöglichen es, die lokalen Steigungswinkel sowie die komplexe optische Brechzahl des Materials zu bestimmen. Das Verfahren konnte an unterschiedlichen Oberflächen erfolgreich erprobt werden.We investigated reflection-ellipsometric methods for high-resolution surface measurement. The topography and the material distribution are determined simultaneously by combinative evaluation of the light polarization. Scanning the surface, the focused measurement beam of a novel PSA-ellipsometer (microellipsometer) delivers the local distributions of four ellipsometric parameters. They are used to calculate the local gradient angles and the complex material refraction index. We successfully carried out tests on various surfaces.

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