The first detailed photoluminescence (PL) study of as-grown CdGeAs 2 samples obtained from three different sources is presented. The study was carried out in the 5-100 K temperature range and laser excitation densities 0.5-5 W cm −2 . PL spectra collected on samples from all sources showed a PL band near 355 meV which is assigned to an (e, A 0 ) transition to the deep native double acceptor 315 meV above the valence band edge. Samples from one source which contained substantially lower levels of oxygen also had about an order of magnitude lower values of absorption coefficient below the band gap and showed also a single PL band in their PL spectra.

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