Niobium doped dititanium trioxide (Ti 2 O 3 :Nb) films were deposited on glass substrates, through grid-assisted magnetron sputtering. The Ti 2 O 3 :Nb films were characterized by X-ray diffraction (XRD), electrical conductivity and optical properties. Film deposition was carried out in two different substrate bias modes: DC and unipolar pulsed. Results show that the negative-pulsed mode improves conductivity and crystallinity. The XRD results show peaks corresponding crystallographic planes of Ti 2 O 3. No niobium oxide Nb x O y peaks were observed, which indicates that niobium oxide if formed, is amorphous, and/or substituted Nb atoms remain in a solid solution within the Ti2O3 structure. It was observed that "as-deposited" Ti 2 O 3 :Nb films (without post annealing) are transparent and electrical conductive, with transmittance that reaches 60% in the visible light wavelength despite the considerable thickness of the film and a miminum resistivity of 2x10-2 Ω.cm which indicates that there is potential for application as Transparent Conductive Oxide (TCO).

This paper reports the effect of pulsed bias in comparison with DC bias on reactive deposition of Ti6Al4V-N films, obtained by Grid Assisted Magnetron Sputtering. The results obtained by X-Ray diffraction (XRD), Energy Dispersive X-ray Fluorescence Spectrometer (EDX) and Atomic Force Microscopy (AFM) show that bias condition affects the crystalline texture and change the roughness and morphology of the films. The DC bias favors the film crystallinity, however the pulsed bias produces smoother films.

In this work Nb-doped TiO 2 (TiO 2 :Nb) films were deposited by reactive sputtering. The substrate was biased with negative pulses to change the energy of the ions nearby the sample surface during the deposition. As consequence, the film crystalline structure and roughness were changed. It was verified that higher energy favours the rutile growth with a higher roughness, even under low temperature as 300°C, and the material structure can be controlled by setting the duty cycle, voltage and frequency of the switched power supply applied to the substrate.