Spatial atomic layer deposition (ALD) is a promising technology for high deposition rate and high-throughput ALD that can be used for roll-to-roll and large-area applications. In an ideal spatial ALD reactor, the design of the injector should be tuned to the deposition kinetics of the ALD reaction, requiring an in-depth knowledge of the dependencies of the growth per cycle (GPC) on the main kinetic parameters. The authors have investigated the deposition kinetics of spatial ALD of alumina from trimethylaluminum and H2O at atmospheric pressure. A kinetic model was developed, which describes the growth per cycle as a function of the main kinetic parameters. The observation of a √t time dependency in the GPC indicates that precursor diffusion to substrate is rate limiting. Next to a fundamental insight into the kinetics of atmospheric pressure spatial ALD, this model can be used for design optimization of new spatial ALD reactors. Furthermore, the model shows that the maximum alumina deposition rates obtainable with spatial ALD are in the order of several nm/s.
Many medical laboratories have made a start with the introduction of quality management systems. However, it is still not clear against which standards such systems should be measured. The existing ISO and CEN standards do not cover essential aspects of medical laboratories. The publication of the EC4 Essential Criteria has stimulated the development of the ISO/Draft International Standard 15189. This standard seems adequate for our type of laboratories. However, it is not easy to read. The EC4 Essential Criteria could well serve as a guide, covering additional aspects, e.g. on total quality management and budget management as required in the EFQM model, that are not (yet) included in the ISO standard. In the present article the EC4 Essential Criteria are cross-referenced with two new international ISO standards, ISO/FDIS 15189 and ISO/FDIS 17025, the latter being the successor of ISO guide 25 and EN 45000. Both new ISO documents are in compliance with the new ISO 9000:2000 standard.
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