The kinetics of the title reactions have been studied at T = 290 K and p = 2 Torr He using the fast‐flow technique combined with molecular‐beam sampling mass spectrometry. – In our novel approach, the total rate constant k1 of RO2 + NO → RO + NO2/RONO2 (1) is determined from the shape of the NO2‐growth profile. The validity of the method is demonstrated by the nearly identical results for k1, (CF3O2 + NO) obtained from CF3O2‐decays: k1 = (1.54 ± 0.35) · 10−11 and from NO2‐growths: k1 = (1.51 ± 0.4) · 10−11 cm3 s−1, in excellent agreement also with previous determinations. – Rate coefficient data of alkylperoxy + NO reactions, derived from NO2‐profiles, are reported for i‐C3H7O2 + NO: k1 = (5.0 ± 1.2) · 10−12 and for t‐C4H9O2 + NO: k1 = (4.0 ± 1.1) · 10−12 cm3 s−1. Our results, in combination with literature values for smaller peroxy radicals, indicate a marked decrease of the rate coefficient with increasing CH3‐substitution. Including data on haloalkyl‐ and acetylperoxy reactions, the reactivity of RO2 towards NO is shown to correlate with the electron acceptor/donor properties of substituents on the α‐carbon.

The rate constants for the combination reactions CF3 + CF3 and CF3 + F at 290 K and helium pressures of approximately 1-6 Torr have been determined, using clean chemical sources of CF3, by means of discharge flow-molecular beam sampling-threshold ionisation mass spectrometry (DF/MB-TIMS). For the mutual reaction of CF3, no pressure dependence could be observed over the 1-6 Torr pressure range, indicating that the obtained rate constant of k1 infinity = (1.8 +/- 0.6) x 10(-12) cm3 s-1 is the high pressure limit. This result, which agrees with the lowest values in literature but is ca. five times smaller than the most recent data, is fully in line with the known trend in the mutual reaction rate constant for the series CH3; CH2F; and CHF2. The reaction of CF3 with F was found to exhibit a clear pressure dependence in the 0.5 to 6 Torr range. Using a Troe fall-off formalism, the low-pressure limit rate constant was determined as k20(He) = (1.47 +/- 0.24) x 10(-28) cm6 S(-1), differing substantially from the only available previous determination; a variational transition state theoretical treatment is shown to support our data.

Silicon nano-pillars as test structures for quantitative evaluation of advanced wafer drying are presented. The method consists of the use of pillar structures with an aspect ratio up to 28 in combination with top-down SEM inspection and subsequent image analysis for quantification. The test vehicle allows characterizing cleaning techniques by a threshold aspect ratio below which value the features do not collapse. As such, a higher critical aspect ratio corresponds to a superior wetting/drying method. Furthermore, as the metrology is specific and includes cluster size distribution analysis, it can bring new insights in the mechanism of pattern collapse.

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The onset of the 22 nm node introduced 3-D Tri-Gate transistors into high-volume manufacturing for improved electrostatics. The next generations of Fin nMOSFETs are predicted to be InGaAs based. Due to the ternary nature of InGaAs, stoichiometric and structural modifications could affect the electronic properties of the etched Fin. In this work we have created InGaAs Fins down to 35 nm CD with atomic surface structure kept nearly identical to that of the bulk. Our experimental and simulation results show the impact of surface stoichiometry and Fin profile on electrical performance.