This article presents an overview of the essential aspects in the fabrication of silicon and some silicon/germanium nanostructures by metal-assisted chemical etching. First, the basic process and mechanism of metal-assisted chemical etching is introduced. Then, the various influences of the noble metal, the etchant, temperature, illumination, and intrinsic properties of the silicon substrate (e.g., orientation, doping type, doping level) are presented. The anisotropic and the isotropic etching behaviors of silicon under various conditions are presented. Template-based metal-assisted chemical etching methods are introduced, including templates based on nanosphere lithography, anodic aluminum oxide masks, interference lithography, and block-copolymer masks. The metal-assisted chemical etching of other semiconductors is also introduced. A brief introduction to the application of Si nanostructures obtained by metal-assisted chemical etching is given, demonstrating the promising potential applications of metal-assisted chemical etching. Finally, some open questions in the understanding of metal-assisted chemical etching are compiled.

In this review we discuss considerations regarding the common techniques used for measuring thermoelectric transport properties necessary for calculating the thermoelectric figure of merit, zT.Advice for improving the data quality in Seebeck coefficient, electrical resistivity, and thermal conductivity (from flash diffusivity and heat capacity) measurements are given together with methods for identifying possible erroneous data. Measurement of the Hall coefficient and calculation of the charge carrier concentration and mobility is also included due to its importance for understanding materials. It is not intended to be a complete record or comparison of all the different techniques employed in thermoelectrics. Rather, by providing an overview of common techniques and their inherent difficulties it is an aid to new researchers or students in the field. The focus is mainly on high temperature measurements but low temperature techniques are also briefly discussed. Measurement guide for authors and reviewersMeasurements should always be repeatable on the same sample, and on new samples produced in the manner described. Thermoelectric effects are steady-state effects so any time dependence or hysteresis is indication that phenomena outside thermoelectric effects are at play. Materials with chemical oxidants/ reductants incorporated are likely to contain unstable internal voltages not due to thermoelectric effects. Unconventional samples or measurement methods deserve reexamination of assumptions. AccuracyTrue accuracy is not represented by a single heating curve from one sample, even with error bars representing instrument precision. Showing heating and cooling data and multiple samples gives a better indication of measurement variability for a typical type of sample. Anisotropy, cracks and inhomogeneities can lead to large variation in measurements. One unusual data point or sample outside the trend, particularly at temperatures just prior to decomposition, usually indicates a problem in sample or measurement. Unusual resultsTypical thermoelectric materials behave like heavily doped semiconductors with thermopower (absolute value of Seebeck coefficient) of less than 300 mV K À1 , resistivity of 0.1-10 mU cm, and are optimized when electronic contribution to the thermal conductivity is about 1/2 the total thermal conductivity. Extraordinary results should be checked by extra means. Unusual results can be caused by bad contacts, thermocouples that have broken, chemically reacted, or simply dried out of calibration. Exceptional resultsReported values of zT > 1 or in unexpected materials receive extra attention from reviewers who may ask for additional conrmation. Convincing measurements may need to be performed on the same sample along the same direction and be repeatable with other samples and measurement methods. There is no official record keeping for claimed or veried zT values. Several papers, patents and press releases have claimed extraordinarily high zT but most have been forgotten over time and likely resul...

Thin films based on melanin are prepared and characterized. The films display electrical conductivities comparable with amorphous silicon as well as a host of other interesting and potentially useful optoelectronic properties. The results may be useful for melanin‐based applications such as chemi‐sensors (in a variety of architectures including OFETS with chemi‐sensitive channels) and bolometric photon detectors.

Metal-assisted chemical etching is a relatively new top-down approach allowing a highly controlled and precise fabrication of Si and Si/Ge superlattice nanowires. It is a simple method with the ability to tailor diverse nanowire parameters like diameter, length, density, orientation, doping level, doping type, and morphology. In a typical metal-assisted chemical etching procedure, a Si substrate is covered by a lithographic noble metal film and etched in a solution containing HF and an oxidant (typically H 2 O 2 ). In general, the function of the metal is to catalyze the reduction of H 2 O 2 , which delivers electronic holes necessary for the oxidation and subsequent dissolution of the Si oxide by HF. However, the details of the etching process using contiguous metal thin films, especially the mass transport of reactants and byproducts are still not well understood. In this study, the etching mechanism was systematically investigated. Several models of metal-assisted chemical etching using a contiguous metal film as a catalyst were developed and tested by performing different well-controlled etching experiments. The experiments helped to identify two processes fundamental for the formation of Si nanowires. First, a thin porous layer is formed beneath the metal film during etching, which facilitates the transport of the electrolyte (HF and H 2 O 2 ). Second, the porous layer is continuously etched away in an electropolishing process, which occurs in direct contact with the metal film. Our results lead to an improved understanding of the fundamentals of the metal-assisted chemical etching on a microscopic scale. It potentially paves a way to integrate lithography with metal-assisted chemical etching for fabrication of Si nanowires with adjustable surface patterns.

The Seebeck coefficient is one of the key quantities of thermoelectric materials and routinely measured in various laboratories. There are, however, several ways to calculate the Seebeck coefficient from the raw measurement data. We compare these different ways to extract the Seebeck coefficient, evaluate the accuracy of the results, and show methods to increase this accuracy. We furthermore point out experimental and data analysis parameters that can be used to evaluate the trustworthiness of the obtained result. The shown analysis can be used to find and minimize errors in the Seebeck coefficient measurement and therefore increase the reliability of the measured material properties.