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High-reflection coatings with broad bandwidth can be achieved by pairing a low refractive index material, such as SiO2, with a high refractive index material, such as TiO2. To achieve high refractive index, low absorption TiO2 films, we optimized the reactive, ion-assisted deposition process (O2 levels, deposition rate, and ion beam settings) using e-beam evaporated Ti. TiO2 high-index layers were then paired with SiO2 low-index layers in a quarter-wave-type coating to achieve a broader high-reflection bandwidth compared to the same coating composed of HfO2/SiO2 layer pairs. However, the improved bandwidth exhibited by the TiO2/SiO2 coating is associated with lower laser damage threshold. To improve the laser damage resistance of the TiO2/SiO2 coating, we also created four coatings where HfO2 replaced some of the outer TiO2 layers. We present the laser damage results of these coatings to understand the trade-offs between good laser damage resistance and high-reflection bandwidth using TiO2 and HfO2.

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We compare designs and laser-induced damage thresholds (LIDTs) of hafnia/silica antireflection (AR) coatings for 1054 nm or dual 527 nm/1054 nm wavelengths and 0° to 45° angles of incidence (AOIs). For a 527 nm/1054 nm, 0° AOI AR coating, LIDTs from three runs arbitrarily selected over three years are ∼20 J/cm2 or higher at 1054 nm and <10 J/cm2 at 527 nm. Calculated optical electric field intensities within the coating show two intensity peaks for 527 nm but not for 1054 nm, correlating with the lower (higher) LIDTs at 527 nm (1054 nm). For 1054 nm AR coatings at 45° and 32° AOIs and S and P polarizations (Spol and Ppol), LIDTs are high for Spol (>35 J/cm2) but not as high for Ppol (>30 J/cm2 at 32° AOI; ∼15 J/cm2 at 45° AOI). Field intensities show that Ppol discontinuities at media interfaces correlate with the lower Ppol LIDTs at these AOIs. For Side 1 and Side 2 dual 527 nm/1054 nm AR coatings of a diagnostic beam splitter at 22.5° AOI, Spol and Ppol LIDTs (>10 J/cm2 at 527 nm; >35 J/cm2 at 1054 nm) are consistent with Spol and Ppol intensity behaviors.