The objective of this research is to establish a shape-memory effect in sputter-deposited films of nickel titanium. The alloy, generically called nitinol, was prepared from sputtering targets in two different compositions. Films were deposited up to 10 μm in thickness on glass substrates using a dc magnetron sputtering source. The as-deposited films were amorphous in structure and did not exhibit a shape memory. The amorphous films were crystallized with a suitable annealing process, and the transformation properties were measured using differential scanning calorimetry. The crystallized films showed transition temperatures that were much lower than those of the parent material. X-ray diffraction patterns indicated that the films were not a single phase but showed evidence of a second phase. However, the annealed films demonstrated a strong shape-memory effect. Stress/strain measurements and physical manipulation were used to evaluate the shape recovery. These tests demonstrated sustained tensile stresses of up to 480 MPa in the high-temperature phase, and a characteristic plastic deformation in the low-temperature phase.

A cubic GaN p–n diode has been grown on n-type GaAs (001) substrates by plasma assisted molecular epitaxy. For p- and n-type doping, elemental Mg and Si beams have been used, respectively. The optical properties are characterized by photoluminescence at room temperature and 2 K. Current–voltage and capacitance–voltage measurements of the cubic GaN n+–p junction are performed at room temperature. The electroluminescence at 300 K is measured through a semitransparent Au contact. A peak emission at 3.2 eV with a full width at half maximum as narrow as 150 meV is observed, indicating that near-band edge transitions are the dominating recombination processes in our device. A linear increase of the electroluminescence intensity with increasing current density is measured.

Nickel-titanium shape memory alloy films, between 2 and 10 μm thick, were sputter deposited onto (100) silicon substrates. Films deposited onto a substrate at ambient temperature were amorphous; however, several post-deposition annealing procedures produced crystalline films exhibiting the B2-to-B19′ phase transition that gives rise to the shape memory effect. Films that were deposited onto a heated substrate, 350–460 °C, crystallized during deposition, eliminating the need for a separate annealing step. Powder x-ray diffraction indicated that these films were highly oriented, with the NiTi (110)B2 face parallel to the silicon substrate (100) face.

A new actuator for silicon micro-valves has been developed and tested. A thin film shape memory alloy provides for large deflections with high speed, low power, and small size. The actuator is batch fabricated with planar processes.

P-type doping with Mg and n-type doping with Si of cubic GaN (c-GaN) epilayers is reported. Cubic GaN films are grown by rf-plasma assisted MBE on semi-insulating GaAs (001) substrates at a substrate temperature of 720°C. Elemental Mg and Si are evaporated from thermal effusions cells. Secondary ion mass spectroscopy (SIMS), low temperature photoluminescence (PL) and temperature dependent Hall-effect measurements are used to study the incorporation, optical and electrical properties. A Mg related shallow donor-acceptor transiton at 3.04 eV with an acceptor activation energy of E A = 0.230 eV is observed by low temperature PL. At Mg concentrations above 10 18 cm -3 the dominance of a broad blue band indicates that also in c-GaN Mg is incorporated at different lattice sites or forms complexes. Si-doped c-GaN epilayers are ntype with electron concentrations up to 5*10 19 cm -3 . The incorporation of Si follows exactly the vapor pressure curve of Si, indicating a sticking coefficient of 1 for Si in c-GaN. With increasing Si-concentration the intensity of the near-band luminescence continuously increases and broadens.