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The interaction of O2 and H20, over the exposure range 107-1013 langmuirs, with chemically cleaned (1:l HCl/H20) and Ar+-ion-bombarded (0.5-3 keV) GaAs surfaces has been studied by X-ray photoelectron spectroscopy. Ion-bombarded GaAs shows an increased chemical reactivity compared to that of chemically cleaned GaAs when exposed to O2 and H20. Ion-bombarded GaAs exposed to O2 yields Ga203, As203, and As205; GazO3 being the major component. Exposure of chemically cleaned and ion-bombarded GaAs to H20 produces only peak broadening on the high binding energy side of the Ga 3d core level photopeak, indicating GaO(0H) formation at an exposure