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We report the first observation of recombination-enhanced recovery of a defect in silicon which is otherwise normally stable at room temperature. This defect, produced by 1.5-MeV electron irradiation of aluminumdoped material at room temperature, is identified as isolated interstitial aluminum through correlated deeplevel transient-capacitance spectroscopy and EPR studies. The recovery rate constant in the absence of minority-carrier injection is 3(10 ) exp( -1.2+0.1 eV/kT) sec . Under saturated injection conditions, it is , 70 exp( -0.27+0.03 eV/kT) sec '. This represents an enhancement of the recovery rate by a factor of -10' at room temperature. We conclude that this enhancement results from an e'fficient conversion of the electronic energy available upon carrier capture to local vibrational energy of the defect which assists it over the migration barrier. The second donor level of the defect (Al+ /Al++) is determined to be at Ev + 0.17 eV.We conclude, however, that the enhancement results from carrier capture and recombination at the first donor level (Al; /Al+) the position of which has not yet been determined. The implications of these results to the properties of the self-interstitial in silicon are discussed.

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Silicon nitride local oxidation masking layers fabricated by low energy nitrogenion implantation into silicon have been employed in the fabrication of n-channel silicon-gate MOSFET's. Processing considerations which are unique to the application of these very thin (10 nm) silicon nitride films are detailed. The effects of oxygen contamination during implantation are described, as are those of subsequent wafer processing steps such as RCA cleaning and oxygen plasma photoresist stripping. It is also shown that resputtered material from the wafer holder can result in iron contamination of the resulting silicon nitride films. Finally, we show that careful attention to these possible problems can produce transistors with reasonable current-voltage characteristics, as compared to conventionally processed devices.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-03-17 to IP