Black phosphorus (BP) is a new rediscovered layered material, which has attracted enormous interests in the field of electrocatalysis. Recent investigations reveal that bulk BP is a promising electrocatalyst for oxygen evolution reactions (OER), whereas its bulk crystal structure restricts sufficient active sites for achieving highly efficient OER catalytic performances. Toward this end, few‐layer BP nanosheets prepared by facile liquid exfoliation are applied as electrocatalysts and exhibit preferable electrocatalytic OER activity in association with structural robustness; subsequently, the dependence of current density and applied bias potential on the concentration of OH− has also been uncovered. Most importantly, we are aware that reduction in the thickness of BP nanosheets would generate extra active sites from the ultrathin planar structure and complimenting to the electrocatalytic activities. It is further anticipated that the current work might provide further implementation about the OER performance of BP nanosheets, thereby, offering extendable availabilities for BP‐based electrocatalysts in constructing high‐performance OER devices.

The band gap of few‐layered 2D material is one of the significant issues for the application of practical devices. Due to the outstanding electrical transport property and excellent photoresponse, 2D InSe has recently attracted rising attention. Herein, few‐layered InSe nanosheets with direct band gap are delivered by a facile liquid‐phase exfoliation approach. We have synthesized a photoelectrochemical (PEC)‐type few‐layered InSe photodetector that exhibits high photocurrent density, responsivity, and stable cycling ability in KOH solution under the irradiation of sunlight. The detective ability of such PEC InSe photodetector can be conveniently tuned by varying the concentration of KOH and applied potential suggesting that the present device can be a fitting candidate as an excellent photodetector. Moreover, extendable optimization of the photodetection performance on InSe nanosheets would further enhance the potential of the prepared InSe in other PEC‐type devices such as dye‐sensitized solar cells, water splitting systems, and solar tracking equipment.

As the last element in Group VA, bismuthene has garnered substantial interest for its unique electronic and mechanical properties and its enhanced stability. However, the mechanism that drives the light-bismuthene interaction remains completely unclear. Herein, a sonochemical exfoliation approach is employed to deliver a successful synthesis of few-layer bismuthene. The corresponding nonlinear optical response at the visible wavelength is investigated. The nonlinear refractive index is ß10 −6 cm 2 /W and was measured by spatial self-phase modulation. Thanks to its direct energy band-gap at 1550 nm, the saturable absorption property of bismuthene is experimentally illustrated at the telecommunication band with an optical modulation depth of ß2.03% and a saturable intensity of ß30 MW/cm 2 . The optimization of the laser parameters resulted in the generation of an ß652-femtosecond optical pulse centered at 1559.18 nm. This result indicates that the bismuthene-based saturable absorber is indeed a new and excellent material for an ultrafast saturable absorber device. Our work highlights the promise of this material in ultrafast photonics and may be considered as an important step towards bismuthene-based photonics devices (optical modulator, optical switcher, detector, etc.).

Two-dimensional layered transition metal dichalcogenides (TMDs) show intriguing potential for optoelectronic devices due to their exotic electronic and optical properties. Only a few efforts have been dedicated to large-area growth of TMDs. Practical applications will require improving the efficiency and reducing the cost of production, through (1) new growth methods to produce large size TMD monolayer with less-stringent conditions, and (2) nondestructive transfer techniques that enable multiple reuse of growth substrate. In this work, we report to employ atmospheric pressure chemical vapor deposition (APCVD) for the synthesis of large size (>100 μm) single crystals of atomically thin tungsten disulfide (WS2), a member of TMD family, on sapphire substrate. More importantly, we demonstrate a polystyrene (PS) mediated delamination process via capillary force in water which reduces the etching time in base solution and imposes only minor damage to the sapphire substrate. The transferred WS2 flakes are of excellent continuity and exhibit comparable electron mobility after several growth cycles on the reused sapphire substrate. Interestingly, the photoluminescence emission from WS2 grown on the recycled sapphire is much higher than that on fresh sapphire, possibly due to p-type doping of monolayer WS2 flakes by a thin layer of water intercalated at the atomic steps of the recycled sapphire substrate. The growth and transfer techniques described here are expected to be applicable to other atomically thin TMD materials.