No abstract

In this work, we present ænet-PyTorch, a PyTorch-based implementation for training artificial neural network-based machine learning interatomic potentials. Developed as an extension of the atomic energy network (ænet), ænet-PyTorch provides access to all the tools included in ænet for the application and usage of the potentials. The package has been designed as an alternative to the internal training capabilities of ænet, leveraging the power of graphic processing units to facilitate direct training on forces in addition to energies. This leads to a substantial reduction of the training time by one to two orders of magnitude compared to the central processing unit implementation, enabling direct training on forces for systems beyond small molecules. Here, we demonstrate the main features of ænet-PyTorch and show its performance on open databases. Our results show that training on all the force information within a dataset is not necessary, and including between 10% and 20% of the force information is sufficient to achieve optimally accurate interatomic potentials with the least computational resources.

C-S-H nucleation is a crucial step during cement hydration and determines to a great extent the rheology, microstructure, and properties of the cement paste. Recent evidences indicate that the C-S-H nucleation is non-classical, yet detailed information on the nucleation steps is still missing. In this work, we use atomistic simulation methods, specifically DFT, evolutionary algorithms (EA), and Molecular Dynamics, to investigate the structure and formation of C-S-H prenucleation clusters (PNCs) from the ions in solution, and then discuss a possible formation pathway for the C-S-H nucleation. Our simulations indicate that even for small sizes the most stable clusters feature C-S-H structural motifs, and we identified a C4S4H2 cluster candidate to be the C-S-H basic building block. We suggest a formation path in which small clusters formed by silicate dimers merge into large elongated aggregates. Upon dehydration, the C-S-H basic building blocks can be formed within the aggregates, and eventually crystallize.

Computational methods, or computer-aided material design (CAMD), used for the analysis and design of materials have a relatively long history. However, the applicability of CAMD has been limited by the scales of computational resources generally available in the past. The surge in computational power seen in recent years is enabling the applicability of CAMD to unprecedented levels. Here, we focus on the CAMD for materials critical for the continued advancement of the complementary metal oxide semiconductor (CMOS) semiconductor technology. In particular, we apply CAMD to the engineering of highpermittivity dielectric materials. We developed a Reax forcefield that includes Si, O, Zr, and H. We used this forcefield in a series of simulations to compute the static dielectric constant of silica glasses for low Zr concentration using a classical molecular dynamics approach. Our results are compared against experimental values. Not only does our work reveal numerical estimations on ZrO 2 -doped silica dielectrics, it also provides a foundation and demonstration of how CAMD can enable the engineering of materials of critical importance for advanced CMOS technology nodes.