Mode-locked lasers find their use in a large number of applications, for instance, in spectroscopic sensing, distance measurements, and optical communication. To enable widespread use of mode-locked lasers, their on-chip integration is desired. In recent years, there have been multiple demonstrations of monolithic III-V and heterogeneous III-V-on-silicon mode-locked lasers. However, the pulse energy, noise performance, and stability of these mode-locked lasers are limited by the relatively high linear and nonlinear waveguide loss, and the high temperature sensitivity of said platforms. Here, we demonstrate a heterogeneous III-V-on-silicon-nitride (III-V-on-SiN) electrically pumped mode-locked laser. SiN’s low waveguide loss, negligible two-photon absorption at telecom wavelengths, and small thermo-optic coefficient enable low-noise mode-locked lasers with high pulse energies and excellent temperature stability. Our mode-locked laser emits at a wavelength of 1.6 μm, has a pulse repetition rate of 3 GHz, a high on-chip pulse energy of ≈2 pJ, a narrow RF linewidth of 400 Hz, and an optical linewidth <1 MHz. The SiN photonic circuits are fabricated on 200 mm silicon wafers in a CMOS pilot line and include an amorphous silicon waveguide layer for efficient coupling from the SiN to the III-V waveguide. The III-V integration is done by micro-transfer-printing, a technique that enables the transfer of thin-film devices in a massively parallel manner on a wafer scale.

Optical phased arrays (OPAs) with phase-monitoring and phase-control capabilities are necessary for robust and accurate beamforming applications. This paper demonstrates an on-chip integrated phase calibration system where compact phase interrogator structures and readout photodiodes are implemented within the OPA architecture. This enables phase-error correction for high-fidelity beam-steering with linear complexity calibration. A 32-channel OPA with 2.5-µm pitch is fabricated in an Si–SiN photonic stack. The readout is done with silicon photon-assisted tunneling detectors (PATDs) for sub-bandgap light detection with no-process change. After the model-based calibration procedure, the beam emitted by the OPA exhibits a sidelobe suppression ratio (SLSR) of −11 dB and a beam divergence of 0.97° × 0.58° at 1.55-µm input wavelength. Wavelength-dependent calibration and tuning are also performed, allowing full 2D beam steering and arbitrary pattern generation with a low complexity algorithm.

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In the current work we present Si and SiN combined photonic built-up for optical phased arrays (OPAs) and other large area photonic integrated circuits. We report low-loss co-integrated SiN waveguides and nearly lossless vertical transitions between Si and SiN layers, as well as efficient Si thermo-optical phase shifter module. OPA consisting of 64 optical antennas forming highly collimated beam with 0.4°× 0.47°divergence is reported. By changing input wavelength, solid-state beam steering of 0°-10°is achieved.

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