Melt‐processing of 5,5′‐bis(4‐hexylphenyl)‐2,2′‐bithiophene leads to a favorable morphology of the conjugated liquid crystal in the channel of an OFET (see figure) and a fivefold improvement of the mobility over that found for conventional devices fabricated by evaporation. This process does not require solvents or vacuum‐deposition processes.

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In this letter, we report on a method of decreasing the injection barrier from metal electrodes to organic semiconductors, namely pentacene and poly(triarylamine) (PTAA). This method involves the electrodeposition of PEDOT∕PSS on to the source electrode of an organic field-effect transistor (OFET) without unintended doping of the channel. In an OFET, the drain current injected at the PEDOT∕PSS coated gold electrode increases (2–6) fold over that of the current injected at the unmodified gold electrode, all else being the same. Furthermore, in the transistor with a polytriarylamine as the semiconductor, a decrease of the threshold voltage is observed.