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Die-attach bonding was evaluated using a transient liquid phase (TLP) bonding method on a Cu/In, Au/In and Cu-Sn3Ag metal stack. TLP bonding is a relatively low cost process since thin layers of material are used and, at the same time, has higher reliability due to the good thermal resistance of the intermetallic compounds (IMCs) formed. The bonded samples were aged at 300°C for 500 h and thermal cycled from −40°C to 125°C for 500 cycles. The results showed that the shear strength of the Cu/In joint was higher than that of the Au/In joint with increasing aging time. Cu/In specimens on a ceramic substrate also showed good reliability results during the thermal cycling test. Even though Cu/In TLP bonding is not popular in conventional electronics, it is suitable for high temperature electronics due to the simplicity of the IMC formation.

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