Thin-film transistors (TFTs) using a TiZnSnO (TZTO) channel layer were fabricated using a sol–gel process. The effect of Ti content on the device performance of the TZTO TFTs was investigated. With increasing content of Ti ions in ZTO, the off-current was significantly decreased and the threshold voltage shifted to the positive bias direction. This is the reason for the fact that the incorporation of Ti results in a reduction in the oxygen vacancy, acting as a carrier source, in the ZTO thin films. The TFT performance with 0.01M Ti exhibited a field-effect mobility (μFE) and an on/off current ratio of 0.52 cm2 V−1 s−1 and 4.1 × 105, respectively.

Thin-film transistors (TFTs) utilizing a TiZnSnO (TZTO) channel layer were fabricated by using a solution process. The effect of annealing temperature on the device performance of the TZTO TFTs was investigated. TFTs with nanocrystalline TZTO films exhibited a better device performance than those with amorphous TZTO films. The on/off current ratio of the TZTO TFTs annealed at 600°C was as large as 4.2 Â 10 6 . The field-effect mobility (l FE ) of 4.1 cm 2 /Vs and subthreshold swing of 1.2 V/decade were achieved.