Articles you may be interested inDisplacement current analysis of carrier behavior in pentacene field effect transistor with poly(vinylidene fluoride and tetrafluoroethylene) gate insulator Hole trapping phenomena in the gate insulator of As-fabricated insulated gate field effect transistors A program to solve the Poisson equation by a finite element method has been developed to simulate accurately the distributions of potential and electric field of the field emission microtriode. The emission current can be calculated by this method more accurately and efficiently than the finite difference method. Moreover, we can consider the effect of a gate insulator structure that cannot be treated by boundary element method. The optimal gate insulator is investigated from the viewpoint of the multilayer structure and the edge shape of the insulator. The emission current can be improved more than 85% using a gate insulator with a vertical edge shape and double-layer structure with different permittivities.

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