No abstract

There are several processes used in the silicon wafer fabrication industry to achieve the planarity necessary for photolithography requirements. Polishing is one of the important processes which influence surface roughness in the manufacturing of silicon wafers. As the level of a silicon wafer surface directly affects device line-width capability, process latitude, yield, and throughput in the fabrication of microchips, it is necessary for it to have an ultra precision surface and flatness. The surface roughness in wafer polishing is affected by many process parameters. To decrease the surface roughness of the wafer, controlling the polishing parameters is very important. Above all, a real-time monitoring technology of the polishing parameters is necessary for the control. In this study, parameters affecting the surface roughness of the silicon wafer are measured in real-time. In addition comparing the predicted value is done according to the process parameters using the artificial neural network. Through these results, we conduct research on the efficient parameters of silicon wafer polishing. Required programs are developed using the Ch computing environment.

As the level of Si-wafer surface directly affects device line-width capability, process latitude, yield, and throughput in fabrication of microchips, it needs to have ultra precision surface and flatness. Polishing is one of the important processing having influence on the surface roughness in manufacturing of Si-wafers. The surface roughness in wafer polishing is mainly affected by the many process parameters. For decreasing the surface roughness, the control of polishing parameters is very important. In this paper, the optimum condition selection of ultra precision wafer polishing and the effect of polishing parameters on the surface roughness were evaluated by the statistical analysis of the process parameters.

Polishing is one of the important methods in manufacturing of Si wafers and in thinning of completed device wafer. This study will report the evaluation on abrasion of wafer according to processing time; machining speed and pressure which have major influence on the abrasion of Si wafer polishing, for this, this study design the head unit and analysis head unit. After that, apply to experiment. It is possible to evaluation of wafer abrasion by load cell and infrared temperature sensor. The evaluation of abrasion according to processing condition is selected to use result data that measure a pressure, machining speed, and the processing time. This result is appeared by abrasion in machining condition. Through that, the study cans evaluation a wafer abrasion in machining. It is important to obtain mirror-like wafer surface.

It is important to obtain the optimal condition in wafer polishing processing. Polishing is one of the most important methods in manufacturing of Si wafers and in thinning of completed device wafer. This study will report the evaluation on abrasion of wafer according to processing time; machining speed and pressure which have the major influence on the abrasion of Si wafer polishing, for this, this study design the head unit and analysis head unit. After that, this study applies to experiment. The evaluation of abrasion according to processing condition is selected to use result data that measure a pressure, machining speed, and the processing time. This result is appeared by machining condition. Through that, the study can evaluate the abrasion characteristic of wafer in machining.