Here, we report a high performance biosensor based on (i) a Cu2+-DNA/MoS2 hybrid structure and (ii) a field effect transistor, which we refer to as a bio-FET, presenting a high sensitivity of 1.7 × 103 A/A. This high sensitivity was achieved by using a DNA nanostructure with copper ions (Cu2+) that induced a positive polarity in the DNA (receptor). This strategy improved the detecting ability for doxorubicin-like molecules (target) that have a negative polarity. Very short distance between the biomolecules and the sensor surface was obtained without using a dielectric layer, contributing to the high sensitivity. We first investigated the effect of doxorubicin on DNA/MoS2 and Cu2+-DNA/MoS2 nanostructures using Raman spectroscopy and Kelvin force probe microscopy. Then, we analyzed the sensing mechanism and performance in DNA/MoS2- and Cu2+-DNA/MoS2-based bio-FETs by electrical measurements (ID-VG at various VD) for various concentrations of doxorubicin. Finally, successful operation of the Cu2+-DNA/MoS2 bio-FET was demonstrated for six cycles (each cycle consisted of four steps: 2 preparation steps, a sensing step, and an erasing step) with different doxorubicin concentrations. The bio-FET showed excellent reusability, which has not been achieved previously in 2D biosensors.
We demonstrated the efficiency improvement of GaAs single-junction (SJ) solar cells with the single-material zinc sulfide (ZnS) bi-layer based on the porous/dense film structure, which was fabricated by the glancing angle deposition (GLAD) method, as an antireflection (AR) coating layer. The porous ZnS film with a low refractive index was formed at a high incident vapor flux angle of 80° in the GLAD. Each optimum thickness of ZnS bi-layer was determined by achieving the lowest solar weighted reflectance (SWR) using a rigorous coupled-wave analysis method in the wavelength region of 350-900 nm, extracting the thicknesses of 20 and 50 nm for dense and porous films, respectively. The ZnS bi-layer with a low SWR of ~5.8% considerably increased the short circuit current density (J(sc)) of the GaAs SJ solar cell to 25.57 mA/cm(2), which leads to a larger conversion efficiency (η) of 20.61% compared to the conventional one without AR layer (i.e., SWR~31%, J(sc) = 18.81 mA/cm(2), and η = 14.82%). Furthermore, after the encapsulation, its J(sc) and η values were slightly increased to 25.67 mA/cm(2) and 20.71%, respectively. For the fabricated solar cells, angle-dependent reflectance properties and external quantum efficiency were also studied.
In this letter, we investigate the electrical behavior of vacancy V Ge defects in Ge at various thermal annealing conditions through electrochemical capacitance-voltage analysis. Then, the effects of the annealing process on Ge n + /p junction diodes were also studied with J −V , transmission electron microscopy, and secondary ion mass spectroscopy measurements in the aspects of point-defect healing and dopant diffusion/loss phenomena. The V Ge defects tend to heal by recombining with Ge interstitial atoms as the annealing process temperature increases. However, the diffusion/loss problems of P atoms in Ge become severe at above 500 • C. Therefore, an optimal postfabrication annealing process at 600 • C is proposed in terms of point-defect healing and dopant diffusion/loss reduction.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.