This study was carried out to examine the changes of the quality feature and antioxidant activity of grape by-products. This experiment was to arrange the basic data for developing a functional material using grape by-products which were useless resources. Hot-air and freeze drying were followed by the gamma irradiation of 1～20 kGy. Hunter's color value, in case of hot-air drying, showed the highest L and a value in the 3 kGy, and it decreased according to the increase of the exposure dose. In the case of freeze drying it showed the highest L and b value at the highest exposure, 20 kGy. It was considered that the breakdown of the pigment through high temperature processing was launched and the influence according to the gamma irradiation was not shown. The gamma irradiation of 3 kGy appeared to have a good influence on the color of the grape by-products which went through hot-air drying. The contents of the total phenolic compounds, in case of hot-air drying, showed the highest total polyphenol contents in the 3 kGy irradiation and it decreased according to the increase of the exposure dose; in contrast, the higher phenolic contents showed in the irradiated group than in the control. In case of freeze drying, the highest phenolic contents appeared in the control but 3 kGy showed the highest one in the irradiated group. Results of radical scavenging activity using DPPH and ABTS indicated that 3 kGy showed the highest radical scavenging activity in hot-air and freeze drying. Therefore, it was found that gamma irradiation of 3 kGy could improve the color and antioxidant activity of grape by-products, but an antioxidant activity of grape by-product due to the gamma irradiation was a little affected in the aspects of by-product utilization.

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Field-effect transistors on a floating body channel have been used for a range of applications, such as three-dimensional nand flash and high-performance devices on silicon-on-insulator wafers. Conventional techniques to characterize the defect states cannot be implemented because those transistors do not have body contacts. A single-pulse charge pumping (SPCP) method was introduced to characterize the defect state distribution of the floating body transistors. The results extracted from the SPCP method on the three-terminal transistors (without body contact) agreed well with those from a conventional charge pumping method or SPCP on four-terminal transistors (with body contact). The validity of the SPCP measurement of the floating body devices was demonstrated by monitoring the increase in the defect state of the three-terminal poly-Si transistors density during the bias stress test. The SPCP method could detect the defect states of floating body transistors with high resolution.