As the semiconductor industry rapidly approaches the 3nm lithography node, on-product overlay (OPO) requirements have become tighter, which drives metrology performance enhancements to meet the reduction in overlay (OVL) residuals. The utilization of multiple measurement wavelengths in Imaging- Based Overlay (IBO) has increased in the past few years to meet these needs. Specifically, the color per layer (CPL) method allows for optimizing the OVL measurement conditions per layer, including focus, light, wavelength (WL), and polarization customization which enhance the metrology results. CPL is applicable for multiple technology segments (logic, foundry, DRAM, 3D NAND), relevant for different devices (DRAM high stack layers, NAND channel holes, etc.), and can work well for both thin and thick layers for standard and EUV lithography processes. In this paper, we will review the benefits of CPL for multiple DRAM and NAND critical layers. We will describe how CPL can contribute to measurement accuracy by quantifying the OVL residual reduction in comparison to single-wavelength (SWL) measurement conditions.

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For advanced nodes, a robust metrology is required to estimate EPE and its contributors. Especially when moving to late process development steps (Ramp-Up and High Volume Manufacturing (HVM)) where inter and intra wafer variations are small but crucial. In this study, we used 8um by 8um SEM images to assess the benefit of large Field-of-View (LFOV) metrology. The result proves the capability of LFOV metrology in capturing not only intra-wafer EPE behavior and its sensitivity to minor variations but also the minor wafer-to-wafer (W2W) variations which is not possible using a small FOV (SFOV) metrology (0.5um by 0.5um) due to larger noise level.