This paper investigated the low frequency noise (LFN) utilizing 1/f noise and random telegraph noise (RTN) characteristics of Hf-based metal/oxide/nitride/oxide/silicon (MONOS) nonvolatile memory (NVM) device with HfO2 and HfON tunneling layer (TL). The low frequency noise spectral density (SID ) was investigated to evaluate the interface characteristics with fresh and after programming/erasing (P/E) cycles of 104. Both devices show similar slope of ~1/f in all of the frequency regions. Although HfON TL shows high SID compared to HfO2 TL, increased ratio is 15.4 which is low compared to HfO2 TL of 21.3. As decreasing the channel length from 10 to 2 μm, HfON TL shows small increased ratio of SID . Due to the nitrided characteristics, HfON TL suppress the degradation of interface. Finally, it is found that trap site of HfO2 TL is located near the interface by RTN measurement with capture (τC) and emission time constant (τE).

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This paper investigated the multi-level 2-bit/cell operation utilizing a Hf-based metal/oxide/nitride/oxide/silicon (MONOS) nonvolatile memory (NVM) device with a HfO2 and HfON tunneling layer (TL). The 2-bit/cell operation is realized by utilizing the localized charge injection method. It was found that drain-current–gate-voltage (I D–V G) characteristics of the programmed states were affected by asymmetry localized in a trapped location along the channel direction. Moreover, the amount of localized trapped charge is strongly affected by drain-source voltage (V DS) in the case of HfON TL. HfON TL shows distinguishable separated all programmed states compared to HfO2 TL. Finally, it was found that all programmed states of HfO2 and HfON TL show similar characteristics according to the channel length and width (L/W) of 2–10/15–90 μm.