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Spectroscopic investigation of chiral absorption bands in [ ]CdGa2(1−x)In2xS4 has been carried out at 55K. The origin of these bands is attributed to both the complex structure of the midgap defect states created by inhomogeneity in as-grown samples and the presence of ordered vacancies at cadmium sites. The appearance of chiral bands are associated with dangling bonds in ordered vacancies which help to bring the component of the magnetic dipole moment parallel to the electric dipole moment. The cause for rotation of electric vector of the field is also discussed.

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