Spintronics, which is the basis of a low-power, beyond-CMOS technology for computational and memory devices, remains up to now entirely based on critical materials such as Co, heavy metals and rare-earths. Here, we show that Mn4N, a rare-earth free ferrimagnet made of abundant elements, is an exciting candidate for the development of sustainable spintronics devices. Mn4N thin films grown epitaxially on SrTiO3 substrates possess remarkable properties, such as a perpendicular magnetisation, a very high extraordinary Hall angle (2%) and smooth domain walls, at the millimeter scale. Moreover, domain walls can be moved at record speeds by spin polarised currents, in absence of spin-orbit torques. This can be explained by the large efficiency of the adiabatic spin transfer torque, due to the conjunction of a reduced magnetisation and a large spin polarisation. Finally, we show that the application of gate voltages through the SrTiO3 substrates allows modulating the Mn4N coercive field with a large efficiency.

We study field-driven domain wall (DW) velocities in asymmetric multilayer stacks with perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya interaction (DMI), both experimentally and by micromagnetic simulations. Using magneto-optical Kerr microscopy under intense and nanoseconds-long fields, we show that DWs in these films propagate at velocities up to hundreds of m/s and that, instead of the expected decrease of velocity after the Walker field, a long plateau with constant velocity is observed, before breakdown. Both the maximum speed and the field extent of the velocity plateau strongly depend on the values of the spontaneous magnetization and the DMI strength, as well as on the magnetic anisotropy. Micromagnetic simulations reproduce these features in sufficiently wide strips, even for perfect samples. A physical model explaining the microscopic origin of the velocity plateau is proposed. I.arXiv:1908.08282v1 [cond-mat.mes-hall]